A porous GaN/MoO3 heterojunction for filter-free, ultra-narrowband ultraviolet photodetection

Commonly, a narrowband photodetector that can detect specific wavelengths is obtained by integrating a broadband photodetector with an external optical filter. However, this integration significantly increases the structural complexity and cost, and reduces the sensitivity. Herein, we demonstrate a...

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Bibliographic Details
Published in:Journal of materials chemistry. C, Materials for optical and electronic devices Materials for optical and electronic devices, 2022-03, Vol.10 (13), p.5116-5123
Main Authors: Guo, Yue, Song, Weidong, Liu, Qing, Sun, Yiming, Chen, Zhao, He, Xin, Zeng, Qingguang, Luo, Xingjun, Zhang, Ruiqing, Li, Shuti
Format: Article
Language:English
Subjects:
Broadband
Communications systems
Dark current
Heterojunctions
Molybdenum trioxide
Narrowband
Optical communication
Optical filters
Photometers
Quantum efficiency
Ultraviolet detectors
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Summary:Commonly, a narrowband photodetector that can detect specific wavelengths is obtained by integrating a broadband photodetector with an external optical filter. However, this integration significantly increases the structural complexity and cost, and reduces the sensitivity. Herein, we demonstrate a filter-free, ultra-narrowband, ultraviolet photodetector based on a porous GaN/MoO3 heterojunction. Porous GaN with reduced defects and enhanced light trapping was fabricated by a facile photoelectrochemical etching method. The optimized porous GaN/MoO3 photodetector shows visible-blind (peaked at 370 nm) and ultra-narrowband (FWHM
ISSN:2050-7526
2050-7534
DOI:10.1039/d1tc05992k