Review of Thin Film Transistor Gas Sensors: Comparison with Resistive and Capacitive Sensors

The present review concerns thin film field effect transistor (TFT)-based gas sensors with special emphasis on material synthesis, electrical characterizations and sensing properties. A comparative analysis of TFT sensors with that of resistive and capacitive sensors is carried out. Comparison revea...

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Bibliographic Details
Published in:Journal of electronic materials 2022-05, Vol.51 (5), p.1974-2003
Main Authors: Singh, A. K., Chowdhury, N. K., Roy, Somnath C., Bhowmik, B.
Format: Article
Language:English
Subjects:
Carrier transport
Characterization and Evaluation of Materials
Chemistry and Materials Science
Electronics and Microelectronics
Field effect transistors
Gas sensors
Gas-solid interfaces
Instrumentation
Materials Science
Operating temperature
Optical and Electronic Materials
Reliability aspects
Review Article
Selectivity
Semiconductor devices
Sensitivity enhancement
Sensors
Solid State Physics
Thin film transistors
Thin films
Transistors
Work functions
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Summary:The present review concerns thin film field effect transistor (TFT)-based gas sensors with special emphasis on material synthesis, electrical characterizations and sensing properties. A comparative analysis of TFT sensors with that of resistive and capacitive sensors is carried out. Comparison reveals that resistive and capacitive sensors have higher sensitivity, whereas TFT sensors offer improved selectivity and higher reliability. This is attributed to gate voltage-induced carrier transport through the sensing channel that reduces the need for higher operating temperature unlike in the case of resistive and capacitive devices. The gas-sensing mechanism is co-related considering adsorption-desorption isotherms and work function modulation at the gas-solid interface. Type of electrode and density of surface states play a major role for sensitivity and reliability enhancement. Factors influencing stability, repeatability and selectivity improvement are also discussed. Graphical Abstract
ISSN:0361-5235
1543-186X
DOI:10.1007/s11664-022-09485-y