Nanoscale multiply charged focused ion beam platform for surface modification, implantation, and analysis

The PELIICAEN (Platform for the Study of Ion Implantation Controlled and Analyzed at the Nanometric Scale) setup is a unique device, both for all of its in situ ultra-high vacuum equipment (focused ion beam column, secondary electron microscope, atomic force microscope, and scanning tunneling micros...

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Bibliographic Details
Published in:Review of scientific instruments 2022-04, Vol.93 (4), p.043703-043703
Main Authors: Lalande, Mathieu, Salou, Pierre, Houel, Arnaud, Been, Thierry, Birou, Thierry, Bourin, Charles, Cassimi, Amine, Keizer, Arthur, Mellier, Jean-Baptiste, Ramillon, Jean-Marc, Sineau, Anthony, Delobbe, Anne, Guillous, Stéphane
Format: Article
Language:English
Subjects:
Atomic force microscopes
Atomic force microscopy
Condensed Matter
Cyclotron resonance
Electron cyclotron resonance
Engineering Sciences
High vacuum
Image resolution
Instrumentation and Detectors
Insulators
Ion beams
Ion implantation
Ion sources
Materials Science
Micro and nanotechnologies
Microelectronics
Physics
Scientific apparatus & instruments
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Summary:The PELIICAEN (Platform for the Study of Ion Implantation Controlled and Analyzed at the Nanometric Scale) setup is a unique device, both for all of its in situ ultra-high vacuum equipment (focused ion beam column, secondary electron microscope, atomic force microscope, and scanning tunneling microscope) and for its nanostructuration performances on materials. The setup has been recently equipped with its own electron cyclotron resonance ion sources, a new position-controlled platform using pneumatic vibration insulators, and a fast pulsing device. Its performances were then deeply improved, providing access to a large choice of ions, an adjustable ion implantation depth up to a few hundred nanometers, an image resolution down to 25 nm, and an ion beam size on the sample down to 100 nm. With all this equipment, the PELIICAEN setup is in the international foreground to perform and analyze ion implantation and surface modification.
ISSN:0034-6748
1089-7623
DOI:10.1063/5.0078914