Interfacial charge transport of Ag2+-decorated CuI thin film for solar cell application

Herein, we prepared CuI film by spray pyrolysis technique, and Ag nanoparticles decorated CuI thin film by photoreduction method, surface modified approach for improving the interfacial charge transfer property and work function of hole transport layer (HTL) in Perovskite Solar Cell (PSC). The conce...

Full description

Saved in:
Bibliographic Details
Published in:Journal of materials science. Materials in electronics 2022-04, Vol.33 (11), p.8586-8593
Main Authors: Prakash, K., Prabakaran, S., Harish, S., Navaneethan, M.
Format: Article
Language:English
Subjects:
Characterization and Evaluation of Materials
Charge transfer
Charge transport
Chemistry and Materials Science
Contact potentials
Diffraction patterns
Materials Science
Nanoparticles
Optical and Electronic Materials
Perovskites
Photovoltaic cells
Raman spectroscopy
Relaxation time
Silver
Solar cells
Spectrum analysis
Spray pyrolysis
Thin films
Work functions
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Herein, we prepared CuI film by spray pyrolysis technique, and Ag nanoparticles decorated CuI thin film by photoreduction method, surface modified approach for improving the interfacial charge transfer property and work function of hole transport layer (HTL) in Perovskite Solar Cell (PSC). The concentration of the Ag was investigated by immersing the CuI thin film in the Ag solution at time intervals. The crystalline property and vibration spectra of the as-fabricated thin film were examined by an X-ray diffraction pattern (XRD) and Raman Spectroscopy. The work function of the as-fabricated thin film was analyzed by Contact Potential Difference (CPD) method as a result of Scanning Kelvin Probe (SKP). The charge transfer resistance of the working electrodes was studied, and the least dipping time sample shows the low charge transfer resistance (36.35 Ω) and less relaxation time (0.19 s).
ISSN:0957-4522
1573-482X
DOI:10.1007/s10854-021-06578-y