A 5.7 THz GaN/AlGaN quantum cascade detector based on polar step quantum wells

We report on a GaN/AlGaN quantum cascade detector operating in the terahertz spectral range. The device was grown by metal organic chemical vapor deposition on a c-sapphire substrate and relies on polar GaN/AlGaN step quantum wells. The active region thickness is in micrometer range. The structural,...

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Bibliographic Details
Published in:arXiv.org 2022-04
Main Authors: Quach, Patrick, Jollivet, Arnaud, Babichev, Andrey, Isac, Nathalie, Morassi, Martina, Lemaitre, Aristide, Yunin, Pavel, Frayssinet, Eric, de Mierry, Philippe, Jeannin, Mathieu, Bousseksou, Adel, Colombelli, Raffaele, Tchernycheva, Maria, Cordier, Yvon, Julien, François
Format: Article
Language:English
Subjects:
Aluminum gallium nitrides
Gallium nitrides
Metalorganic chemical vapor deposition
Organic chemicals
Organic chemistry
Photoelectric effect
Photoelectric emission
Quantum wells
Sapphire
Sensors
Substrates
Thickness
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Summary:We report on a GaN/AlGaN quantum cascade detector operating in the terahertz spectral range. The device was grown by metal organic chemical vapor deposition on a c-sapphire substrate and relies on polar GaN/AlGaN step quantum wells. The active region thickness is in micrometer range. The structural, electrical and optical investigations attest of high structural quality of the synthetized nitride material. The detector exhibits a peak photocurrent at 5.7 THz (23.6 meV) with a responsivity of 0.1 mA/W at 10 K under surface normal irradiation through a 10 um period grating. The photocurrent persists up to 20 K.
ISSN:2331-8422
DOI:10.48550/arxiv.2204.07117