Surface proton conduction below 100 °C of Ce0.80Sm0.20O2−δ thin film with oxygen vacancies

Ce0.80Sm0.20O2−δ thin films with (111) orientation were prepared on (0001) Al2O3 substrates by RF magnetron sputtering. The Ce3+ valence ratios, which are closely related to the oxygen vacancies’ concentration, of the as-deposited and wet-annealed thin films were 37.8% and 29.3%, respectively. These...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2022-06, Vol.61 (SD), p.SD1017
Main Authors: Notake, Go, Nishioka, Daiki, Murasawa, Hideaki, Takayanagi, Makoto, Fukushima, Yoshiaki, Ito, Hiroki, Takada, Tomoasa, Shiga, Daisuke, Kitamura, Miho, Kumigashira, Hiroshi, Higuchi, Tohru
Format: Article
Language:English
Subjects:
Aluminum oxide
Annealing
Cerium
Conduction cooling
Magnetron sputtering
Oxygen ions
oxygen vacancy
Photoelectric emission
Photovoltaic cells
Proton conduction
Substrates
surface proton conduction
thin film
Thin films
Vacancies
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Summary:Ce0.80Sm0.20O2−δ thin films with (111) orientation were prepared on (0001) Al2O3 substrates by RF magnetron sputtering. The Ce3+ valence ratios, which are closely related to the oxygen vacancies’ concentration, of the as-deposited and wet-annealed thin films were 37.8% and 29.3%, respectively. These thin films exhibited oxygen ion related conduction in the medium-temperature region of 800 to 200 °C. Below 100 °C, the conductivity (σ) of the wet-annealed thin film increased as the temperature (T) decreased and the σT value was ∼1.0 S cm−1 K at 25 °C. The O 1s photoemission spectrum exhibited H2O and OH− peaks on the surface. The above results indicate that the protons on the surface of the wet-annealed thin film actively migrated through the physisorbed water layer by the Grotthuss mechanism.
ISSN:0021-4922
1347-4065
DOI:10.35848/1347-4065/ac4feb