Surface proton conduction below 100 °C of Ce0.80Sm0.20O2−δ thin film with oxygen vacancies

Ce0.80Sm0.20O2−δ thin films with (111) orientation were prepared on (0001) Al2O3 substrates by RF magnetron sputtering. The Ce3+ valence ratios, which are closely related to the oxygen vacancies’ concentration, of the as-deposited and wet-annealed thin films were 37.8% and 29.3%, respectively. These...

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Published in:Japanese Journal of Applied Physics 2022-06, Vol.61 (SD), p.SD1017
Main Authors: Notake, Go, Nishioka, Daiki, Murasawa, Hideaki, Takayanagi, Makoto, Fukushima, Yoshiaki, Ito, Hiroki, Takada, Tomoasa, Shiga, Daisuke, Kitamura, Miho, Kumigashira, Hiroshi, Higuchi, Tohru
Format: Article
Language:English
Subjects:
Aluminum oxide
Annealing
Cerium
Conduction cooling
Magnetron sputtering
Oxygen ions
oxygen vacancy
Photoelectric emission
Photovoltaic cells
Proton conduction
Substrates
surface proton conduction
thin film
Thin films
Vacancies
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container_issue SD
container_start_page SD1017
container_title Japanese Journal of Applied Physics
container_volume 61
creator Notake, Go
Nishioka, Daiki
Murasawa, Hideaki
Takayanagi, Makoto
Fukushima, Yoshiaki
Ito, Hiroki
Takada, Tomoasa
Shiga, Daisuke
Kitamura, Miho
Kumigashira, Hiroshi
Higuchi, Tohru
description Ce0.80Sm0.20O2−δ thin films with (111) orientation were prepared on (0001) Al2O3 substrates by RF magnetron sputtering. The Ce3+ valence ratios, which are closely related to the oxygen vacancies’ concentration, of the as-deposited and wet-annealed thin films were 37.8% and 29.3%, respectively. These thin films exhibited oxygen ion related conduction in the medium-temperature region of 800 to 200 °C. Below 100 °C, the conductivity (σ) of the wet-annealed thin film increased as the temperature (T) decreased and the σT value was ∼1.0 S cm−1 K at 25 °C. The O 1s photoemission spectrum exhibited H2O and OH− peaks on the surface. The above results indicate that the protons on the surface of the wet-annealed thin film actively migrated through the physisorbed water layer by the Grotthuss mechanism.
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subjects Aluminum oxide
Annealing
Cerium
Conduction cooling
Magnetron sputtering
Oxygen ions
oxygen vacancy
Photoelectric emission
Photovoltaic cells
Proton conduction
Substrates
surface proton conduction
thin film
Thin films
Vacancies
title Surface proton conduction below 100 °C of Ce0.80Sm0.20O2−δ thin film with oxygen vacancies
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