Investigation of the effect of Sn doping on Al/Sn: ZnS/p-Si diode parameters with C–V and G/ω-V characteristics

In this study, Sn (tin) doped ZnS (zinc sulphide) films have been deposited on the p-type Si (silicon) crystal substrates by the sol-gel dipping technique. The effect of Sn doping in ZnS on diode parameters has been studied via capacitance-voltage (C–V) and conductance-voltage (G/ω-V) measurements i...

Full description

Saved in:
Bibliographic Details
Published in:Physica. B, Condensed matter Condensed matter, 2022-02, Vol.627, p.413593, Article 413593
Main Authors: Çam, Şirin Uzun, Yazıcı, A. Necmeddin, Alsaç, Aysun Arslan, Serin, Tülay
Format: Article
Language:English
Subjects:
Aluminum
Carrier density
Diode
Diodes
Doping
Electric potential
Energy levels
Frequency ranges
Impact analysis
MIS Structure
Parameters
Room temperature
Semiconductor doping
Silicon
Silicon substrates
Sn doped
Sol-gel
Sol-gel processes
Temperature
Tin
Titanium nitride
Voltage
Zinc sulfide
ZnS
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:In this study, Sn (tin) doped ZnS (zinc sulphide) films have been deposited on the p-type Si (silicon) crystal substrates by the sol-gel dipping technique. The effect of Sn doping in ZnS on diode parameters has been studied via capacitance-voltage (C–V) and conductance-voltage (G/ω-V) measurements in the frequency range of 10 kHz - 1.5 MHz at room temperature. Fermi energy level (EF), carrier concentration (NA), the density of interface states (Nss), barrier heights (ΦB), and built-in potential (Vbi) of the diodes have been obtained by C–V characteristics. Series resistance (Rs) values of diodes have been determined for different frequencies via C–V and G/ω-V measurements.
ISSN:0921-4526
1873-2135
DOI:10.1016/j.physb.2021.413593