Integrated Pockels Laser

• Published in: arXiv.org 2022-04
• Main Authors: Li, Mingxiao, Chang, Lin, Wu, Lue, Staffa, Jeremy, Ling, Jingwei, Javid, Usman A, He, Yang, Lopez-rios, Raymond, Xue, Shixin, Morin, Theodore J, Shen, Boqiang, Wang, Heming, Zeng, Siwei, Zhu, Lin, Vahala, Kerry J, Bowers, John E, Lin, Qiang
• Format: Article
• Language: English
• Subjects: Atomic physics; Frequency modulation; Lasers; Lithium niobates; Microwave photonics; Photonics; Semiconductor lasers; Waveguides
• ISSN: 2331-8422
• DOI: 10.48550/arxiv.2204.12078

The development of integrated semiconductor lasers has miniaturized traditional bulky laser systems, enabling a wide range of photonic applications. A progression from pure III-V based lasers to III-V/external cavity structures has harnessed low-loss waveguides in different material systems, leading to significant improvements in laser coherence and stability. Despite these successes, however, key functions remain absent. In this work, we address a critical missing function by integrating the Pockels effect into a semiconductor laser. Using a hybrid integrated III-V/Lithium Niobate structure, we demonstrate several essential capabilities that have not existed in previous integrated lasers. These include a record-high frequency modulation speed of 2 exahertz/s (2.0\(\times\)10\(^{18}\) Hz/s) and fast switching at 50 MHz, both of which are made possible by integration of the electro-optic effect. Moreover, the device co-lases at infrared and visible frequencies via the second-harmonic frequency conversion process, the first such integrated multi-color laser. Combined with its narrow linewidth and wide tunability, this new type of integrated laser holds promise for many applications including LiDAR, microwave photonics, atomic physics, and AR/VR.