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Effect of Hydrostatic Pressure on the Resistivity of La0.8Ag0.1MnO3 Ceramic near TC
The effect of hydrostatic pressure up to 8.5 GPa on the transport characteristics of granular ceramic manganite La 0.8 Ag 0.1 MnO 3 near the temperature corresponding to the magnetoresistance peak has been studied. The electrical resistivity has been measured in the temperature range of 275–320 K at...
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Published in: | JETP letters 2022, Vol.115 (4), p.190-195 |
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description | The effect of hydrostatic pressure up to 8.5 GPa on the transport characteristics of granular ceramic manganite La
0.8
Ag
0.1
MnO
3
near the temperature corresponding to the magnetoresistance peak has been studied. The electrical resistivity has been measured in the temperature range of 275–320 K at pressures
P
= 0, 0.44, 2.32, 3.81, and 4.84 GPa. The temperature of the transition from the metallic to semiconductor type of conductivity is a monotonically increasing function of the applied pressure with a slope of 4.54 K/GPa. At 296 K, the linear logarithmic plot of the pressure dependence of the resistivity exhibits an anomaly in the form of a kink at 3.85 GPa. It has been shown that the observed transition with a change in the slope in the logarithmic plot of the pressure dependence of the resistivity is due to the existence of two scattering processes: intragranular and near-boundary ones. Near the transition point, both scattering processes make comparable contributions to the resistivity. For pressures
P
< 3.85 GPa, the contribution to the resistivity from scattering in the boundary layers of grains dominates, whereas the contribution from the homogeneous material within the grains is dominant in the high-pressure range. |
doi_str_mv | 10.1134/S0021364022040051 |
format | article |
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0.8
Ag
0.1
MnO
3
near the temperature corresponding to the magnetoresistance peak has been studied. The electrical resistivity has been measured in the temperature range of 275–320 K at pressures
P
= 0, 0.44, 2.32, 3.81, and 4.84 GPa. The temperature of the transition from the metallic to semiconductor type of conductivity is a monotonically increasing function of the applied pressure with a slope of 4.54 K/GPa. At 296 K, the linear logarithmic plot of the pressure dependence of the resistivity exhibits an anomaly in the form of a kink at 3.85 GPa. It has been shown that the observed transition with a change in the slope in the logarithmic plot of the pressure dependence of the resistivity is due to the existence of two scattering processes: intragranular and near-boundary ones. Near the transition point, both scattering processes make comparable contributions to the resistivity. For pressures
P
< 3.85 GPa, the contribution to the resistivity from scattering in the boundary layers of grains dominates, whereas the contribution from the homogeneous material within the grains is dominant in the high-pressure range.</description><identifier>ISSN: 0021-3640</identifier><identifier>EISSN: 1090-6487</identifier><identifier>DOI: 10.1134/S0021364022040051</identifier><language>eng</language><publisher>Moscow: Pleiades Publishing</publisher><subject>Atomic ; Biological and Medical Physics ; Biophysics ; Boundary layer transition ; Condensed Matter ; Electrical resistivity ; Hydrostatic pressure ; Magnetoresistance ; Magnetoresistivity ; Molecular ; Optical and Plasma Physics ; Particle and Nuclear Physics ; Physics ; Physics and Astronomy ; Pressure dependence ; Pressure effects ; Quantum Information Technology ; Scattering ; Solid State Physics ; Spintronics ; Transition points ; Transport properties</subject><ispartof>JETP letters, 2022, Vol.115 (4), p.190-195</ispartof><rights>Pleiades Publishing, Inc. 2022. ISSN 0021-3640, JETP Letters, 2022, Vol. 115, No. 4, pp. 190–195. © Pleiades Publishing, Inc., 2022. Russian Text © The Author(s), 2022, published in Pis’ma v Zhurnal Eksperimental’noi i Teoreticheskoi Fiziki, 2022, Vol. 115, No. 4, pp. 218–223.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c1131-b0b2ae828cd83d30305fb7e3fd80ab15050f7a8916f090cccccd35e8838bab173</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Gamzatov, A. G.</creatorcontrib><creatorcontrib>Gudin, S. A.</creatorcontrib><creatorcontrib>Arslanov, T. R.</creatorcontrib><creatorcontrib>Markelova, M. N.</creatorcontrib><creatorcontrib>Kaul, A. R.</creatorcontrib><title>Effect of Hydrostatic Pressure on the Resistivity of La0.8Ag0.1MnO3 Ceramic near TC</title><title>JETP letters</title><addtitle>Jetp Lett</addtitle><description>The effect of hydrostatic pressure up to 8.5 GPa on the transport characteristics of granular ceramic manganite La
0.8
Ag
0.1
MnO
3
near the temperature corresponding to the magnetoresistance peak has been studied. The electrical resistivity has been measured in the temperature range of 275–320 K at pressures
P
= 0, 0.44, 2.32, 3.81, and 4.84 GPa. The temperature of the transition from the metallic to semiconductor type of conductivity is a monotonically increasing function of the applied pressure with a slope of 4.54 K/GPa. At 296 K, the linear logarithmic plot of the pressure dependence of the resistivity exhibits an anomaly in the form of a kink at 3.85 GPa. It has been shown that the observed transition with a change in the slope in the logarithmic plot of the pressure dependence of the resistivity is due to the existence of two scattering processes: intragranular and near-boundary ones. Near the transition point, both scattering processes make comparable contributions to the resistivity. For pressures
P
< 3.85 GPa, the contribution to the resistivity from scattering in the boundary layers of grains dominates, whereas the contribution from the homogeneous material within the grains is dominant in the high-pressure range.</description><subject>Atomic</subject><subject>Biological and Medical Physics</subject><subject>Biophysics</subject><subject>Boundary layer transition</subject><subject>Condensed Matter</subject><subject>Electrical resistivity</subject><subject>Hydrostatic pressure</subject><subject>Magnetoresistance</subject><subject>Magnetoresistivity</subject><subject>Molecular</subject><subject>Optical and Plasma Physics</subject><subject>Particle and Nuclear Physics</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Pressure dependence</subject><subject>Pressure effects</subject><subject>Quantum Information Technology</subject><subject>Scattering</subject><subject>Solid State Physics</subject><subject>Spintronics</subject><subject>Transition points</subject><subject>Transport properties</subject><issn>0021-3640</issn><issn>1090-6487</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2022</creationdate><recordtype>article</recordtype><recordid>eNp1UM9LwzAUDqLgnP4B3gKeO1-Spk2Po0wnVCZunkvavswO184kFfbfmzLBg_gu7_D9eO_7CLllMGNMxPdrAM5EEgPnEANIdkYmDDKIklil52QywtGIX5Ir53YAjCmRTsh6YQzWnvaGLo-N7Z3Xvq3pi0XnBou076h_R_qKrnW-_Wr9caQWGmZqvg23n7uVoDlavQ-qDrWlm_yaXBj94fDmZ0_J28Niky-jYvX4lM-LqA4vs6iCimtUXNWNEo0AAdJUKQrTKNAVkyDBpFplLDEhSD1OIyQqJVQV8FRMyd3J92D7zwGdL3f9YLtwsuSJTJTI4kQGFjux6pDOWTTlwbZ7bY8lg3LsrvzTXdDwk8YFbrdF--v8v-gbnF5tqw</recordid><startdate>2022</startdate><enddate>2022</enddate><creator>Gamzatov, A. G.</creator><creator>Gudin, S. A.</creator><creator>Arslanov, T. R.</creator><creator>Markelova, M. N.</creator><creator>Kaul, A. R.</creator><general>Pleiades Publishing</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>2022</creationdate><title>Effect of Hydrostatic Pressure on the Resistivity of La0.8Ag0.1MnO3 Ceramic near TC</title><author>Gamzatov, A. G. ; Gudin, S. A. ; Arslanov, T. R. ; Markelova, M. N. ; Kaul, A. R.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c1131-b0b2ae828cd83d30305fb7e3fd80ab15050f7a8916f090cccccd35e8838bab173</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2022</creationdate><topic>Atomic</topic><topic>Biological and Medical Physics</topic><topic>Biophysics</topic><topic>Boundary layer transition</topic><topic>Condensed Matter</topic><topic>Electrical resistivity</topic><topic>Hydrostatic pressure</topic><topic>Magnetoresistance</topic><topic>Magnetoresistivity</topic><topic>Molecular</topic><topic>Optical and Plasma Physics</topic><topic>Particle and Nuclear Physics</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>Pressure dependence</topic><topic>Pressure effects</topic><topic>Quantum Information Technology</topic><topic>Scattering</topic><topic>Solid State Physics</topic><topic>Spintronics</topic><topic>Transition points</topic><topic>Transport properties</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Gamzatov, A. G.</creatorcontrib><creatorcontrib>Gudin, S. A.</creatorcontrib><creatorcontrib>Arslanov, T. R.</creatorcontrib><creatorcontrib>Markelova, M. N.</creatorcontrib><creatorcontrib>Kaul, A. R.</creatorcontrib><collection>CrossRef</collection><jtitle>JETP letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Gamzatov, A. G.</au><au>Gudin, S. A.</au><au>Arslanov, T. R.</au><au>Markelova, M. N.</au><au>Kaul, A. R.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effect of Hydrostatic Pressure on the Resistivity of La0.8Ag0.1MnO3 Ceramic near TC</atitle><jtitle>JETP letters</jtitle><stitle>Jetp Lett</stitle><date>2022</date><risdate>2022</risdate><volume>115</volume><issue>4</issue><spage>190</spage><epage>195</epage><pages>190-195</pages><issn>0021-3640</issn><eissn>1090-6487</eissn><abstract>The effect of hydrostatic pressure up to 8.5 GPa on the transport characteristics of granular ceramic manganite La
0.8
Ag
0.1
MnO
3
near the temperature corresponding to the magnetoresistance peak has been studied. The electrical resistivity has been measured in the temperature range of 275–320 K at pressures
P
= 0, 0.44, 2.32, 3.81, and 4.84 GPa. The temperature of the transition from the metallic to semiconductor type of conductivity is a monotonically increasing function of the applied pressure with a slope of 4.54 K/GPa. At 296 K, the linear logarithmic plot of the pressure dependence of the resistivity exhibits an anomaly in the form of a kink at 3.85 GPa. It has been shown that the observed transition with a change in the slope in the logarithmic plot of the pressure dependence of the resistivity is due to the existence of two scattering processes: intragranular and near-boundary ones. Near the transition point, both scattering processes make comparable contributions to the resistivity. For pressures
P
< 3.85 GPa, the contribution to the resistivity from scattering in the boundary layers of grains dominates, whereas the contribution from the homogeneous material within the grains is dominant in the high-pressure range.</abstract><cop>Moscow</cop><pub>Pleiades Publishing</pub><doi>10.1134/S0021364022040051</doi><tpages>6</tpages></addata></record> |
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subjects | Atomic Biological and Medical Physics Biophysics Boundary layer transition Condensed Matter Electrical resistivity Hydrostatic pressure Magnetoresistance Magnetoresistivity Molecular Optical and Plasma Physics Particle and Nuclear Physics Physics Physics and Astronomy Pressure dependence Pressure effects Quantum Information Technology Scattering Solid State Physics Spintronics Transition points Transport properties |
title | Effect of Hydrostatic Pressure on the Resistivity of La0.8Ag0.1MnO3 Ceramic near TC |
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