A Ka-Band High-Power Switchable Filtering Power Combiner MMIC in 100-nm GaN-on-Si

This article presents a Ka-band switchable filtering power combiner monolithic microwave integrated circuit (MMIC), which unifies the functionalities of the switch, bandpass filter, and power combiner. For effective integration, a codesign approach is proposed by sharing the switchable resonant unit...

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Bibliographic Details
Published in:IEEE transactions on industrial electronics (1982) 2022-10, Vol.69 (10), p.10467-10477
Main Authors: Shen, Guangxu, Zhu, Haoshen, Zeng, Dingyuan, Xue, Quan, Che, Wenquan
Format: Article
Language:English
Subjects:
Band-pass filters
Bandpass filters
Co-design
Couplings
Extremely high frequencies
Filter
Filtering
gallium nitride (GaN)
Impedance matching
Insertion loss
Integrated circuits
millimeter-wave switch
MMIC (circuits)
monolithic microwave integrated circuit (MMIC)
multifunctional
Optical switches
power combiner
Power combiners
Resonators
Transistors
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Summary:This article presents a Ka-band switchable filtering power combiner monolithic microwave integrated circuit (MMIC), which unifies the functionalities of the switch, bandpass filter, and power combiner. For effective integration, a codesign approach is proposed by sharing the switchable resonant units and coupling matrix based impedance matching technique. Moreover, this approach offers great design freedom to realize arbitrary bandwidth and power ratios. For good return loss, the input external quality factor ( Q e ) is ensured as half of output Q e based on even-mode analysis. By analyzing the odd-mode circuit, the complex isolation element is introduced to improve the isolation between input ports. For demonstration, one prototype is implemented using a 100-nm GaN-on-Si process. Over 18-dB return loss, 1.7-dB minimum insertion loss (excluding 3-dB power ratio), >22 dB input-input isolation, and over 47-dB off -state isolation can be observed throughout 24-32 GHz. Besides, the proposed MMIC shows good linearity with a measured IP1dB of over 30 dBm within the passband, while the die size is 0.81 mm 2 .
ISSN:0278-0046
1557-9948
DOI:10.1109/TIE.2021.3135633