Electronic transport properties of B/N/P co-doped armchair graphene nanoribbon field effect transistor

• Published in: Diamond and related materials 2022-04, Vol.124, p.108893, Article 108893
• Main Authors: Wen, Ruolan, Jiang, Zhenhong, Miao, Rui, Wang, Lei, Liang, Yujian, Deng, Jingui, Shao, Qingyi, Zhang, Jian
• Format: Article
• Language: English
• Subjects: Armchair graphene nanoribbons (AGNRs); Density functional theory; Density functional theory (DFT); Electric potential; Electron transport; Electronic transport properties; Field effect transistors; Graphene; Graphene nanoribbons field effect transistor (GNRFET); Green's functions; Integrated circuits; Memory devices; Metal-oxide-semiconductor field effect transistors (MOSFETs); MOSFETs; Nanoribbons; Nitrogen; Semiconductor devices; Transistors; Transport properties; Voltage
• ISSN: 0925-9635; 1879-0062
• DOI: 10.1016/j.diamond.2022.108893

On the basis of the Density functional theory (DFT) combined with non-equilibrium Green's function (NEGF), we have investigated the application potential of the boron, nitrogen and phosphorus co-doped seven-atom-wide armchair graphene nanoribbons field effect transistor (7-AGNR-FET). The transfer characteristics indicate that the gate voltage (VG) can modulate the electronic transport properties of 7-AGNR FET, and the ION/IOFF ratio reaches 128.67. When a positive drain voltage (VD) is applied, the device exhibits appreciate working behavior with a saturation drain-source current (IDS) of 76.21 μA. Transmission pathways, transmission spectra and Molecular projection self-consistent Hamiltonian (MPSH) are calculated to explain the variations in current including negative differential resistance (NDR) effect under negative VD. The negative VG affects the height of the channel barrier and causes the rectifying effect. Moreover, band structures and projected density of states (PDOS) shows the performances of devices strongly depend on doping positions. This NPN-doped device simulates the structure of MOSFET as realistically as possible, and it possesses promising applications in memory device and rectifier of carbon-based integrated circuits. [Display omitted] •Our 7-AGNR-FET reduces the scales of devices and increases the integration density.•The Ion/Ioff ratio of the 7-ANGR-FET doped in the center of the nanoribbon reaches 128.67.•The output curve of the 7-AGNR-FET shows NDR effect in the reverse bias.•Under specific gate voltage, 7-AGNR-FET can realize unidirectional conduction.