Electronic band structure and x-ray spectra of boron nitride polytypes

• Published in: Physics of the solid state 2003-05, Vol.45 (5), p.816-824
• Main Authors: Ilyasov, V. V., Zhdanova, T. P., Nikiforov, I. Ya
• Format: Article
• Language: English
• Subjects: Absorption spectra; Band structure of solids; Boron; Boron nitride; Coherent potential approximation; Conduction bands; Coordination numbers; Crystal structure; Emission spectra; Nitrogen atoms; Photoelectrons; Polytypes; Silicones; Wurtzite; X ray absorption; X ray spectra; Zincblende
• ISSN: 1063-7834; 1090-6460
• DOI: 10.1134/1.1575317

The electronic band structures of boron nitride crystal modifications of the graphite (h-BN), wurtzite (w-BN), and sphalerite (c-BN) types are calculated using the local coherent potential method in the cluster muffin-tin approximation within the framework of the multiple scattering theory. The specific features of the electronic band structure of 2H, 4H, and 3C boron nitride polytypes are compared with those of experimental x-ray photoelectron, x-ray emission, and K x-ray absorption spectra of boron and nitrogen. The features of the experimental x-ray spectra of boron nitride in different crystal modifications are interpreted. It is demonstrated that the short-wavelength peak revealed in the total densities of states (TDOS) in the boron nitride polytypes under consideration can be assigned to the so-called outer collective band formed by 2p electrons of boron and nitrogen atoms. The inference is made that the decrease observed in the band gap when changing over from wurtzite and sphalerite to hexagonal boron nitride is associated with the change in the coordination number of the components, which, in turn, leads to a change in the energy location of the conduction band bottom in the crystal.