Phase and structural changes stimulated in multilayer contacts to n-GaAs by rapid thermal annealing

Phase, structural, and electrical properties of Au-Mo-TiBx-AuGe-GaAs multilayer contact systems, which are used in the process of formation of GaAs-based Gunn diodes, were investigated. The phase composition and level of residual stresses were investigated by X-ray diffraction, the morphological spe...

Full description

Saved in:
Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2003-09, Vol.37 (9), p.1114-1118
Main Authors: Boltovets, N. S., Ivanov, V. N., Konakova, R. V., Lytvyn, P. M., Lytvyn, O. S., Milenin, V. V., Prokopenko, I. V.
Format: Article
Language:English
Subjects:
Annealing
Contact stresses
Current voltage characteristics
Electric contacts
Electric fields
Electrical properties
Gunn diodes
Investigations
Multilayers
Phase composition
Residual stress
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Phase, structural, and electrical properties of Au-Mo-TiBx-AuGe-GaAs multilayer contact systems, which are used in the process of formation of GaAs-based Gunn diodes, were investigated. The phase composition and level of residual stresses were investigated by X-ray diffraction, the morphological specific features of Au films were investigated by the AFM method, and current-voltage characteristics were investigated in the region of a weak electric field. The investigations were carried out prior to and after rapid thermal annealing in hydrogen at T=400, 600, and 800°C for 60 s. It is shown that right up to the annealing temperature T=600°C, the buffer properties of TiBx are retained. The role of internal mechanical stresses in the degradation of nonrectifying Au-Mo-TiBx-AuGe-GaAs contacts is established.
ISSN:1063-7826
1090-6479
DOI:10.1134/1.1610130