X-ray detectors based on epitaxial gallium arsenide

Two types of photovoltaic X-ray detectors based on intrinsic and chromium-compensated epitaxial gallium arsenide are studied. The amplitude spectra taken with different radioactive sources show that the efficiency of charge collection in these detectors is no higher than 60%. While in the detectors...

Full description

Saved in:
Bibliographic Details
Published in:Technical physics 2006-08, Vol.51 (8), p.1008-1011
Main Authors: Ayzenshtat, G. I., Vilisova, M. D., Drugova, E. P., Lelekov, M. A., Mokeev, D. Yu, Ponomarev, I. V., Porokhovnichenko, L. P., Tolbanov, O. P., Chubirko, V. A.
Format: Article
Language:English
Subjects:
Charge efficiency
Chromium
Collection
Electric fields
Epitaxy
Free electrons
Gallium arsenide
Intermetallic compounds
Sensors
Space charge
X ray detectors
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Two types of photovoltaic X-ray detectors based on intrinsic and chromium-compensated epitaxial gallium arsenide are studied. The amplitude spectra taken with different radioactive sources show that the efficiency of charge collection in these detectors is no higher than 60%. While in the detectors made from intrinsic epitaxial GaAs (a free electron concentration on the order of 1012 cm−3) incomplete charge collection is related to a nonuniform electric field generated by the space charge of deep levels, in the structures based on the chromium-compensated epitaxial material with specific resistance ρ ∼ 108 Ω cm, incomplete charge collection is caused by intense capture of holes. It is shown that, in the latter structures, the lifetime of nonequilibrium electrons is rather high and may reach 40 ns.
ISSN:1063-7842
1090-6525
DOI:10.1134/S1063784206080093