Electroluminescence at 1.54 μm in Si:Er/Si structures grown by sublimation molecular-beam epitaxy

In Si:Er/Si diode structures grown by sublimation molecular-beam epitaxy in a vacuum with a pressure of ∼10−7 mbar at temperatures 520–580°C, the intensity of room-temperature electroluminescence at 1.54 μm is studied as a function of the concentration and distribution of erbium and donor impurities...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2006-07, Vol.40 (7), p.846-853
Main Authors: Kuznetsov, V. P., Remizov, D. Yu, Shabanov, V. N., Rubtsova, R. A., Stepikhova, M. V., Kryzhov, D. I., Shushunov, A. N., Belova, O. V., Krasil’nik, Z. F., Maksimov, G. A.
Format: Article
Language:English
Subjects:
Electric field strength
Electroluminescence
Epitaxial growth
Erbium
Free electrons
Hot electrons
Molecular beam epitaxy
PIN diodes
Room temperature
Silicon
Silicon controlled rectifiers
Sublimation
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Summary:In Si:Er/Si diode structures grown by sublimation molecular-beam epitaxy in a vacuum with a pressure of ∼10−7 mbar at temperatures 520–580°C, the intensity of room-temperature electroluminescence at 1.54 μm is studied as a function of the concentration and distribution of erbium and donor impurities in the space-charge region (SCR) and the SCR width. Methods for obtaining electroluminescence in diodes with a wide (0.1–1 μm) SCR are developed. The mean free path of electrons with respect to their interaction with Er centers and the threshold energy a free electron needs in order to excite an Er-shell electron are determined. The values of electric-field strength corresponding to breakdown in silicon p-i-n diodes with and without Er doping are obtained experimentally. A model describing the interaction of hot electrons with Er centers is suggested.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782606070207