The transition layer in TiB2-GaAs and Au-TiB2-GaAs Schottky contacts

Spectral characteristics of the transverse bulk photovoltage in the TiB2-GaAs and Au-TiB2-GaAs Schottky contacts for starting samples (unannealed) and samples annealed at 400, 600, and 800°C were measured. The concentration of the dopant for the n-GaAs substrate was 1016 cm−3. It was found that the...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2001-01, Vol.35 (4), p.427-432
Main Authors: Venger, E. F., Konakova, R. V., Okhrimenko, O. B., Sapko, S. Yu, Shekhovtsov, L. V., Ivanov, V. N.
Format: Article
Language:English
Subjects:
Annealing
Bulk density
Diffusion layers
Dopants
Doping
Gallium arsenide
Radioactivity
Substrates
Titanium diboride
Transition layers
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Summary:Spectral characteristics of the transverse bulk photovoltage in the TiB2-GaAs and Au-TiB2-GaAs Schottky contacts for starting samples (unannealed) and samples annealed at 400, 600, and 800°C were measured. The concentration of the dopant for the n-GaAs substrate was 1016 cm−3. It was found that the transition layer is formed in the TiB2-GaAs structures owing to the diffusion of boron atoms into the GaAs substrate. Thermal annealing leads to an increase in the doping level of the layer. For the Au-TiB2-GaAs structure, the transition layer is formed, with the doping level of this layer being weakly affected by thermal annealing. The spectral position of the bulk-photovoltage peaks indicates that the tails of the density of states are formed in the band gap of the semiconductor transition layer owing to an increase in the dopant concentration to 1017–1018 cm−3.
ISSN:1063-7826
1090-6479
DOI:10.1134/1.1365188