Nearly room-temperature type-II quantum-well lasers at 3-4 μm

We report optically pumped four-constituent InAs/InGaSb/InAs/AlSb type-II quantum-well lasers emitting at 3.2–4.1 μm. Lasing was observed up to 350K under pulsed operation, with a characteristic temperature T0 up to 68K at temperatures above ambient.

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Bibliographic Details
Published in:Journal of electronic materials 1997-05, Vol.26 (5), p.440-443
Main Authors: LIN, C.-H, CHANG, P. C, GOLDBERG, L, HOFFMAN, C. A, BARTOLI, E. J, MURRY, S. J, ZHANG, D, YANG, R. Q, PEI, S. S, MALIN, J. I, MEYER, J. R, FELIX, C. L, LINDLE, J. R
Format: Article
Language:English
Subjects:
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Lasers
Optics
Physics
Quantum well lasers
Room temperature
Semiconductor lasers
laser diodes
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Description
Summary:We report optically pumped four-constituent InAs/InGaSb/InAs/AlSb type-II quantum-well lasers emitting at 3.2–4.1 μm. Lasing was observed up to 350K under pulsed operation, with a characteristic temperature T0 up to 68K at temperatures above ambient.
ISSN:0361-5235
1543-186X
DOI:10.1007/s11664-997-0116-6