Nearly room-temperature type-II quantum-well lasers at 3-4 μm

We report optically pumped four-constituent InAs/InGaSb/InAs/AlSb type-II quantum-well lasers emitting at 3.2–4.1 μm. Lasing was observed up to 350K under pulsed operation, with a characteristic temperature T0 up to 68K at temperatures above ambient.

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Published in:Journal of electronic materials 1997-05, Vol.26 (5), p.440-443
Main Authors: LIN, C.-H, CHANG, P. C, GOLDBERG, L, HOFFMAN, C. A, BARTOLI, E. J, MURRY, S. J, ZHANG, D, YANG, R. Q, PEI, S. S, MALIN, J. I, MEYER, J. R, FELIX, C. L, LINDLE, J. R
Format: Article
Language:English
Subjects:
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Lasers
Optics
Physics
Quantum well lasers
Room temperature
Semiconductor lasers
laser diodes
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cited_by cdi_FETCH-LOGICAL-c300t-1b12b8c2abde136a35f819ad9dbfeaa45c1238bf0d794c0d0007877a986c183
cites cdi_FETCH-LOGICAL-c300t-1b12b8c2abde136a35f819ad9dbfeaa45c1238bf0d794c0d0007877a986c183
container_end_page 443
container_issue 5
container_start_page 440
container_title Journal of electronic materials
container_volume 26
creator LIN, C.-H
CHANG, P. C
GOLDBERG, L
HOFFMAN, C. A
BARTOLI, E. J
MURRY, S. J
ZHANG, D
YANG, R. Q
PEI, S. S
MALIN, J. I
MEYER, J. R
FELIX, C. L
LINDLE, J. R
description We report optically pumped four-constituent InAs/InGaSb/InAs/AlSb type-II quantum-well lasers emitting at 3.2–4.1 μm. Lasing was observed up to 350K under pulsed operation, with a characteristic temperature T0 up to 68K at temperatures above ambient.
doi_str_mv 10.1007/s11664-997-0116-6
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subjects Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Lasers
Optics
Physics
Quantum well lasers
Room temperature
Semiconductor lasers
laser diodes
title Nearly room-temperature type-II quantum-well lasers at 3-4 μm
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