Structure and properties of zinc oxide films deposited in the recombination burning zone of a low-temperature plasma

The structure and refractive index of thin zinc oxide films grown in reactive gas-discharge plasma have been studied. Reactions on the substrate and film growth occur under conditions of complete or partial reagent ionization. The ion recombination and kinetic energies activate film growth. Thermal...

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Bibliographic Details
Published in:Technical physics 2007-05, Vol.52 (5), p.663-665
Main Authors: Burylin, E. I., Veselov, A. G., Dzhumaliev, A. S., Elmanov, V. I., Istomin, S. N., Kiryasova, O. A., Pushkareva, T. A., Ryabushkin, S. L.
Format: Article
Language:English
Subjects:
Film growth
Ion recombination
Low temperature
Oxide coatings
Reagents
Refractivity
Substrates
Thin films
Zinc oxide
Zinc oxides
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Summary:The structure and refractive index of thin zinc oxide films grown in reactive gas-discharge plasma have been studied. Reactions on the substrate and film growth occur under conditions of complete or partial reagent ionization. The ion recombination and kinetic energies activate film growth. Thermal heating of the films is absent. Under certain concentration of recombining ions, the films are found to acquire new structural and electrooptic properties rather than being destructed. To a thickness of 1500 Å, the films are optically dense and have high mechanical and chemical resistance and changed interplanar spacing and refractive index as compared to the analogous properties of the ZnO films synthesized during thermal activation.
ISSN:1063-7842
1090-6525
DOI:10.1134/S1063784207050209