Fabrication and photoelectric properties of oxide/CuIn5Se8 heterojunctions

Single crystals of the n-CuIn5Se8 compound of hexagonal modification have been grown by direct crystallization from melt. On the basis of the experimental study of its thermal interaction with air oxygen, a method for fabricating new oxide/n-CuIn5Se8 heterojunctions is proposed. Electrical and photo...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2007-02, Vol.41 (2), p.155-158
Main Authors: Bodnar’, I. V., Vaĭpolin, A. A., Rud’, V. Yu, Rud’, Yu. V., Terukov, E. I.
Format: Article
Language:English
Subjects:
Broadband
Converters
Crystallization
Crystals
Heterojunctions
New technology
Optical radiation
Oxygen
Photoelectric effect
Photoelectricity
Photosensitivity
Single crystals
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Summary:Single crystals of the n-CuIn5Se8 compound of hexagonal modification have been grown by direct crystallization from melt. On the basis of the experimental study of its thermal interaction with air oxygen, a method for fabricating new oxide/n-CuIn5Se8 heterojunctions is proposed. Electrical and photoelectric properties of the structures obtained have been investigated. It is shown that the interaction of n-CuIn5Se8 of hexagonal modification with air oxygen makes it possible to obtain heterojunctions with high photosensitivity. The new technology can be used in the design of broadband optical radiation converters based on n-CuIn5Se8 crystals.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782607020078