Raman investigation of the electron-phonon interaction in n-type silicon nanocrystals

Silicon nanocrystals prepared in phosphorus-doped (at a concentration of 3.3 × 10 20 cm −3 ) amorphous silicon films under pulsed irradiation with an excimer laser are studied using Raman spectroscopy and electron microscopy. The experimental data can be interpreted in terms of the Fano interference...

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Bibliographic Details
Published in:Physics of the solid state 2008-05, Vol.50 (5), p.962-965
Main Authors: Volodin, V. A., Efremov, M. D., Cherkov, A. G.
Format: Article
Language:English
Subjects:
Amorphous silicon
Electron phonon interactions
Excimer lasers
Excimers
Low-Dimensional Systems and Surface Physics
Nanocrystals
Phonons
Physics
Physics and Astronomy
Raman spectroscopy
Silicon
Silicon films
Solid State Physics
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Summary:Silicon nanocrystals prepared in phosphorus-doped (at a concentration of 3.3 × 10 20 cm −3 ) amorphous silicon films under pulsed irradiation with an excimer laser are studied using Raman spectroscopy and electron microscopy. The experimental data can be interpreted in terms of the Fano interference as a manifestation of the electron-phonon interaction effects in n -type silicon nanocrystals. It is assumed that a strong electron-phonon interaction (as compared to similar interactions in n -type bulk silicon) is due to the weakening of the momentum selection rules in nanocrystals.
ISSN:1063-7834
1090-6460
DOI:10.1134/S1063783408050260