Formation of Facets in GaAs Crystals Doped with Sn and Te during the Growth by the Czochralski Method

Facets are formed at the periphery of the conical part of GaAs single crystals grown by the Czochralski method when the melt is supercooled at the crystal periphery. The stronger the supercooling, the longer the facets are. A difference is observed in the facet shape between Sn- and Te-doped crystal...

Full description

Saved in:
Bibliographic Details
Published in:Crystallography reports 2022, Vol.67 (3), p.323-326
Main Authors: Yugova, T. G., Knyazev, S. N., Pavlova, O. S.
Format: Article
Language:English
Subjects:
Crystal growth
Crystallography and Scattering Methods
Crystals
Czochralski method
Doped crystals
Gallium arsenide
Physics
Physics and Astronomy
Real Structure of Crystals
Single crystals
Supercooling
Tellurium
Citations: Items that this one cites
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Facets are formed at the periphery of the conical part of GaAs single crystals grown by the Czochralski method when the melt is supercooled at the crystal periphery. The stronger the supercooling, the longer the facets are. A difference is observed in the facet shape between Sn- and Te-doped crystals. It is shown that the facet region is faceted by the А (111) plane.
ISSN:1063-7745
1562-689X
DOI:10.1134/S1063774522030245