Thermal Field Effect in Resistive Random Access Memory With Sidewall Structures of Different Thermal Conductivity

The effect of different pulse rise time in resistive random access memory (RRAM) is presented in this study. The result shows that the length of pulse rise time will lead to variations in RRAM OFF-state resistance that occur due to which of two distinct effects governs the reaction, either the elect...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2022-06, Vol.69 (6), p.3147-3150
Main Authors: Zhang, Yong-Ci, Tsai, Tsung-Ming, Chen, Wen-Chung, Tan, Yung-Fang, Sun, Li-Chuan, Kuo, Chuan-Wei, Lin, Chih-Chih
Format: Article
Language:English
Subjects:
C-doped BN (C:BN)
Conductivity
Electric fields
Electrodes
Ions
Random access memory
Resistance
resistive random access memory (RRAM)
sidewall
Switches
Thermal conductivity
thermal field effect
Thermal resistance
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Summary:The effect of different pulse rise time in resistive random access memory (RRAM) is presented in this study. The result shows that the length of pulse rise time will lead to variations in RRAM OFF-state resistance that occur due to which of two distinct effects governs the reaction, either the electric field or the thermal field. Different sidewall materials are adopted in RRAM devices to verify these phenomena, and a physical model supplemented with COMSOL simulation is proposed.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2022.3169116