Thermal Field Effect in Resistive Random Access Memory With Sidewall Structures of Different Thermal Conductivity

The effect of different pulse rise time in resistive random access memory (RRAM) is presented in this study. The result shows that the length of pulse rise time will lead to variations in RRAM OFF-state resistance that occur due to which of two distinct effects governs the reaction, either the elect...

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Published in:IEEE transactions on electron devices 2022-06, Vol.69 (6), p.3147-3150
Main Authors: Zhang, Yong-Ci, Tsai, Tsung-Ming, Chen, Wen-Chung, Tan, Yung-Fang, Sun, Li-Chuan, Kuo, Chuan-Wei, Lin, Chih-Chih
Format: Article
Language:English
Subjects:
C-doped BN (C:BN)
Conductivity
Electric fields
Electrodes
Ions
Random access memory
Resistance
resistive random access memory (RRAM)
sidewall
Switches
Thermal conductivity
thermal field effect
Thermal resistance
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cited_by cdi_FETCH-LOGICAL-c1368-17a7fed20d18660421d3cc60ac159bf553027df5c8e50afe61821e5029c30d0b3
cites cdi_FETCH-LOGICAL-c1368-17a7fed20d18660421d3cc60ac159bf553027df5c8e50afe61821e5029c30d0b3
container_end_page 3150
container_issue 6
container_start_page 3147
container_title IEEE transactions on electron devices
container_volume 69
creator Zhang, Yong-Ci
Tsai, Tsung-Ming
Chen, Wen-Chung
Tan, Yung-Fang
Sun, Li-Chuan
Kuo, Chuan-Wei
Lin, Chih-Chih
description The effect of different pulse rise time in resistive random access memory (RRAM) is presented in this study. The result shows that the length of pulse rise time will lead to variations in RRAM OFF-state resistance that occur due to which of two distinct effects governs the reaction, either the electric field or the thermal field. Different sidewall materials are adopted in RRAM devices to verify these phenomena, and a physical model supplemented with COMSOL simulation is proposed.
doi_str_mv 10.1109/TED.2022.3169116
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fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_2669164598</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>9766413</ieee_id><sourcerecordid>2669164598</sourcerecordid><originalsourceid>FETCH-LOGICAL-c1368-17a7fed20d18660421d3cc60ac159bf553027df5c8e50afe61821e5029c30d0b3</originalsourceid><addsrcrecordid>eNo9kF1LwzAUhoMoOKf3gjcBrztzkjZtL8c-VJgI28TL0iUnLKNrt6Sd7N-bsenVOQee9z3wEPIIbADA8pflZDzgjPOBAJkDyCvSgyRJo1zG8pr0GIMsykUmbsmd95twyjjmPbJfrtFty4pOLVaaToxB1VJb0zl661t7QDova91s6VAp9J5-4LZxR_pt2zVdWI0_ZVXRRes61XYOPW0MHdvQ4rBu6V_5qKl1AOzBtsd7cmPKyuPDZfbJ13SyHL1Fs8_X99FwFikQMosgLVODmjMNmZQs5qCFUpKVCpJ8ZZJEMJ5qk6gME1YalJBxCCvPlWCarUSfPJ97d67Zd-jbYtN0rg4vCy6DIhkneRYodqaUa7x3aIqds9vSHQtgxUlsEcQWJ7HFRWyIPJ0jFhH_8TyVMgYhfgF2pXRe</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2669164598</pqid></control><display><type>article</type><title>Thermal Field Effect in Resistive Random Access Memory With Sidewall Structures of Different Thermal Conductivity</title><source>IEEE Electronic Library (IEL) Journals</source><creator>Zhang, Yong-Ci ; Tsai, Tsung-Ming ; Chen, Wen-Chung ; Tan, Yung-Fang ; Sun, Li-Chuan ; Kuo, Chuan-Wei ; Lin, Chih-Chih</creator><creatorcontrib>Zhang, Yong-Ci ; Tsai, Tsung-Ming ; Chen, Wen-Chung ; Tan, Yung-Fang ; Sun, Li-Chuan ; Kuo, Chuan-Wei ; Lin, Chih-Chih</creatorcontrib><description>The effect of different pulse rise time in resistive random access memory (RRAM) is presented in this study. The result shows that the length of pulse rise time will lead to variations in RRAM OFF-state resistance that occur due to which of two distinct effects governs the reaction, either the electric field or the thermal field. Different sidewall materials are adopted in RRAM devices to verify these phenomena, and a physical model supplemented with COMSOL simulation is proposed.</description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/TED.2022.3169116</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>C-doped BN (C:BN) ; Conductivity ; Electric fields ; Electrodes ; Ions ; Random access memory ; Resistance ; resistive random access memory (RRAM) ; sidewall ; Switches ; Thermal conductivity ; thermal field effect ; Thermal resistance</subject><ispartof>IEEE transactions on electron devices, 2022-06, Vol.69 (6), p.3147-3150</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2022</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c1368-17a7fed20d18660421d3cc60ac159bf553027df5c8e50afe61821e5029c30d0b3</citedby><cites>FETCH-LOGICAL-c1368-17a7fed20d18660421d3cc60ac159bf553027df5c8e50afe61821e5029c30d0b3</cites><orcidid>0000-0002-2106-691X</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/9766413$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,27901,27902,54771</link.rule.ids></links><search><creatorcontrib>Zhang, Yong-Ci</creatorcontrib><creatorcontrib>Tsai, Tsung-Ming</creatorcontrib><creatorcontrib>Chen, Wen-Chung</creatorcontrib><creatorcontrib>Tan, Yung-Fang</creatorcontrib><creatorcontrib>Sun, Li-Chuan</creatorcontrib><creatorcontrib>Kuo, Chuan-Wei</creatorcontrib><creatorcontrib>Lin, Chih-Chih</creatorcontrib><title>Thermal Field Effect in Resistive Random Access Memory With Sidewall Structures of Different Thermal Conductivity</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description>The effect of different pulse rise time in resistive random access memory (RRAM) is presented in this study. The result shows that the length of pulse rise time will lead to variations in RRAM OFF-state resistance that occur due to which of two distinct effects governs the reaction, either the electric field or the thermal field. Different sidewall materials are adopted in RRAM devices to verify these phenomena, and a physical model supplemented with COMSOL simulation is proposed.</description><subject>C-doped BN (C:BN)</subject><subject>Conductivity</subject><subject>Electric fields</subject><subject>Electrodes</subject><subject>Ions</subject><subject>Random access memory</subject><subject>Resistance</subject><subject>resistive random access memory (RRAM)</subject><subject>sidewall</subject><subject>Switches</subject><subject>Thermal conductivity</subject><subject>thermal field effect</subject><subject>Thermal resistance</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2022</creationdate><recordtype>article</recordtype><recordid>eNo9kF1LwzAUhoMoOKf3gjcBrztzkjZtL8c-VJgI28TL0iUnLKNrt6Sd7N-bsenVOQee9z3wEPIIbADA8pflZDzgjPOBAJkDyCvSgyRJo1zG8pr0GIMsykUmbsmd95twyjjmPbJfrtFty4pOLVaaToxB1VJb0zl661t7QDova91s6VAp9J5-4LZxR_pt2zVdWI0_ZVXRRes61XYOPW0MHdvQ4rBu6V_5qKl1AOzBtsd7cmPKyuPDZfbJ13SyHL1Fs8_X99FwFikQMosgLVODmjMNmZQs5qCFUpKVCpJ8ZZJEMJ5qk6gME1YalJBxCCvPlWCarUSfPJ97d67Zd-jbYtN0rg4vCy6DIhkneRYodqaUa7x3aIqds9vSHQtgxUlsEcQWJ7HFRWyIPJ0jFhH_8TyVMgYhfgF2pXRe</recordid><startdate>202206</startdate><enddate>202206</enddate><creator>Zhang, Yong-Ci</creator><creator>Tsai, Tsung-Ming</creator><creator>Chen, Wen-Chung</creator><creator>Tan, Yung-Fang</creator><creator>Sun, Li-Chuan</creator><creator>Kuo, Chuan-Wei</creator><creator>Lin, Chih-Chih</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0002-2106-691X</orcidid></search><sort><creationdate>202206</creationdate><title>Thermal Field Effect in Resistive Random Access Memory With Sidewall Structures of Different Thermal Conductivity</title><author>Zhang, Yong-Ci ; Tsai, Tsung-Ming ; Chen, Wen-Chung ; Tan, Yung-Fang ; Sun, Li-Chuan ; Kuo, Chuan-Wei ; Lin, Chih-Chih</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c1368-17a7fed20d18660421d3cc60ac159bf553027df5c8e50afe61821e5029c30d0b3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2022</creationdate><topic>C-doped BN (C:BN)</topic><topic>Conductivity</topic><topic>Electric fields</topic><topic>Electrodes</topic><topic>Ions</topic><topic>Random access memory</topic><topic>Resistance</topic><topic>resistive random access memory (RRAM)</topic><topic>sidewall</topic><topic>Switches</topic><topic>Thermal conductivity</topic><topic>thermal field effect</topic><topic>Thermal resistance</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Zhang, Yong-Ci</creatorcontrib><creatorcontrib>Tsai, Tsung-Ming</creatorcontrib><creatorcontrib>Chen, Wen-Chung</creatorcontrib><creatorcontrib>Tan, Yung-Fang</creatorcontrib><creatorcontrib>Sun, Li-Chuan</creatorcontrib><creatorcontrib>Kuo, Chuan-Wei</creatorcontrib><creatorcontrib>Lin, Chih-Chih</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005–Present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Xplore</collection><collection>CrossRef</collection><collection>Electronics &amp; Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Zhang, Yong-Ci</au><au>Tsai, Tsung-Ming</au><au>Chen, Wen-Chung</au><au>Tan, Yung-Fang</au><au>Sun, Li-Chuan</au><au>Kuo, Chuan-Wei</au><au>Lin, Chih-Chih</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Thermal Field Effect in Resistive Random Access Memory With Sidewall Structures of Different Thermal Conductivity</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>2022-06</date><risdate>2022</risdate><volume>69</volume><issue>6</issue><spage>3147</spage><epage>3150</epage><pages>3147-3150</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>The effect of different pulse rise time in resistive random access memory (RRAM) is presented in this study. The result shows that the length of pulse rise time will lead to variations in RRAM OFF-state resistance that occur due to which of two distinct effects governs the reaction, either the electric field or the thermal field. Different sidewall materials are adopted in RRAM devices to verify these phenomena, and a physical model supplemented with COMSOL simulation is proposed.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TED.2022.3169116</doi><tpages>4</tpages><orcidid>https://orcid.org/0000-0002-2106-691X</orcidid></addata></record>
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source IEEE Electronic Library (IEL) Journals
subjects C-doped BN (C:BN)
Conductivity
Electric fields
Electrodes
Ions
Random access memory
Resistance
resistive random access memory (RRAM)
sidewall
Switches
Thermal conductivity
thermal field effect
Thermal resistance
title Thermal Field Effect in Resistive Random Access Memory With Sidewall Structures of Different Thermal Conductivity
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-23T20%3A21%3A28IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Thermal%20Field%20Effect%20in%20Resistive%20Random%20Access%20Memory%20With%20Sidewall%20Structures%20of%20Different%20Thermal%20Conductivity&rft.jtitle=IEEE%20transactions%20on%20electron%20devices&rft.au=Zhang,%20Yong-Ci&rft.date=2022-06&rft.volume=69&rft.issue=6&rft.spage=3147&rft.epage=3150&rft.pages=3147-3150&rft.issn=0018-9383&rft.eissn=1557-9646&rft.coden=IETDAI&rft_id=info:doi/10.1109/TED.2022.3169116&rft_dat=%3Cproquest_cross%3E2669164598%3C/proquest_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c1368-17a7fed20d18660421d3cc60ac159bf553027df5c8e50afe61821e5029c30d0b3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=2669164598&rft_id=info:pmid/&rft_ieee_id=9766413&rfr_iscdi=true