Enhanced n-Type conductivity of rutile TiO2 nanowires

• Published in: Materials letters 2022-07, Vol.318, p.1, Article 132200
• Main Authors: Li, Shanying, Lu, Bingxue, Wang, Xiao, jin, Biao, Zhang, Jianwu, Zhang, Xiaoting
• Format: Article
• Language: English
• Subjects: Carrier density; Crystal growth; Doping; Electrical properties; Electronic devices; Materials science; Nanocrystalline materials; Nanoelectronics; Nanotechnology devices; Nanowires; Photoelectricity; Rutile; Semiconductors; Single crystals; Synergistic effect; Synthesis; Titanium dioxide
• ISSN: 0167-577X; 1873-4979
• DOI: 10.1016/j.matlet.2022.132200

[Display omitted] •Rutile TiO2 NWs are synthesized by H reducing atmosphere and V doping technique.•The as-synthesized TiO2 nanowires grow along direction of [01–1].•The nano-FETs based on individual n-type TiO2 NWs are constructed.•The Rutile TiO2 NWs exhibit significant n-type conductivity. This paper reports a solvothermal process to synthesize the rutile TiO2 assisted by the hydrogen reducing atmosphere and vanadium doping technique. The synthesized TiO2 nanowires have a rutile structure with a diameter of about 100 nm and a single crystal growth direction of [01–1]. Moreover, TiO2 nanowires exhibit n-type conductivity with a carrier concentration of 1.87 × 1018 cm−3 and mobility of 1 cm2V−1S−1. The research results show that the n-type conductivity of rutile TiO2 nanowires can be enhanced under the synergistic effect of reducing atmosphere and V doping. The rutile nanowires with good n-type conductivity have bright application in future nano-electronic devices and nano-photoelectric devices.