Defect Profiling of Oxide-Semiconductor Interfaces Using Low-Energy Muons

Muon spin rotation with low-energy muons (LE{\mu}SR) is a powerful nuclear method where electrical and magnetic properties of surface-near regions and thin films can be studied on a length scale of \(\approx\)\SI{200}{\nano\meter}. In this work, we show the potential of utilizing low-energy muons fo...

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Bibliographic Details
Published in:arXiv.org 2022-06
Main Authors: Mendes Martins, Maria Inês, Kumar, Piyush, Woerle, Judith, Ni, Xiaojie, Grossner, Ulrike, Prokscha, Thomas
Format: Article
Language:English
Subjects:
Magnetic properties
Muon spin rotation
Muons
Oxidation
Particle spin
Plasma enhanced chemical vapor deposition
Silicon carbide
Silicon dioxide
Thin films
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Summary:Muon spin rotation with low-energy muons (LE{\mu}SR) is a powerful nuclear method where electrical and magnetic properties of surface-near regions and thin films can be studied on a length scale of \(\approx\)\SI{200}{\nano\meter}. In this work, we show the potential of utilizing low-energy muons for a depth-resolved characterization of oxide-semiconductor interfaces, i.e. for silicon (Si) and silicon carbide (4H-SiC). Silicon dioxide (SiO\(_2\)) grown by plasma-enhanced chemical vapor deposition (PECVD) and by thermal oxidation of the SiO\(_2\)-semiconductor interface are compared with respect to interface and defect formation. The nanometer depth resolution of {\mu}allows for a clear distinction between the oxide and semiconductor layers, while also quantifying the extension of structural changes caused by the oxidation of both Si and SiC.
ISSN:2331-8422