Combinatorial synthesis of cation-disordered manganese tin nitride MnSnN\(_2\) thin films with magnetic and semiconducting properties

Magnetic semiconductors may soon improve the energy efficiency of computers, but materials exhibiting these dual properties remain underexplored. Here, we report the computational prediction and realization of a new magnetic and semiconducting material, MnSnN\(_2\), via combinatorial sputtering of t...

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Bibliographic Details
Published in:arXiv.org 2022-06
Main Authors: Rom, Christopher L, Smaha, Rebecca W, Melamed, Celeste L, Schnepf, Rekha R, Heinselman, Karen N, Mangum, John S, Sang-Jun, Lee, Lany, Stephan, Schelhas, Laura T, Greenaway, Ann L, Neilson, James R, Bauers, Sage R, Andrew, Jennifer S, Tamboli, Adele C
Format: Article
Language:English
Subjects:
Antiferromagnetism
Cations
Combinatorial analysis
Composition
Low temperature
Magnetic permeability
Magnetic properties
Magnetic semiconductors
Magnetism
Manganese
Room temperature
Semiconductors
Spectroellipsometry
Thin films
Tin
Titanium nitride
Wurtzite
X-ray scattering
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Summary:Magnetic semiconductors may soon improve the energy efficiency of computers, but materials exhibiting these dual properties remain underexplored. Here, we report the computational prediction and realization of a new magnetic and semiconducting material, MnSnN\(_2\), via combinatorial sputtering of thin films. Grazing incidence wide angle X-ray scattering and laboratory X-ray diffraction studies show a wide composition tolerance for this wurtzite-like MnSnN\(_2\), ranging from \(20\%
ISSN:2331-8422
DOI:10.48550/arxiv.2206.03594