Synthesis, characterization and fuzzy simulation of ZnO thin film on flexible substrate

ZnO is promising material for the electronic and optoelectronic devices. In present work we have fabricated the ZnO film by DC reactive magnetron sputtering. The variations of reactive and sputtering gases affect the crystallite size and band gap of ZnO film. In present work the ZnO film is prepared...

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Bibliographic Details
Published in:Journal of intelligent & fuzzy systems 2022, Vol.43 (2), p.2109-2114
Main Authors: Imran, Muhammad, Butt, Alvina Rafiq, Qasim, Faheem, Fahad, Hafiz Muhammad, Sher, Falk, Waseem, Muhammad Faisal
Format: Article
Language:English
Subjects:
Argon
Crystallites
Energy gap
Magnetron sputtering
Optoelectronic devices
Structural analysis
Substrates
Thin films
Wurtzite
Zinc oxide
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Summary:ZnO is promising material for the electronic and optoelectronic devices. In present work we have fabricated the ZnO film by DC reactive magnetron sputtering. The variations of reactive and sputtering gases affect the crystallite size and band gap of ZnO film. In present work the ZnO film is prepared at 50 watt power by DC reactive spurting method. The fuzzy simulation has been performed to estimate the best argon oxygen gas ratio which gives the better crystallinity and band-gap. The structural analysis shows that the ZnO film has hexagonal wurtzite structure. The UV-vis spectroscopy has been employed to find the band gap.the measured band gap value of ZnO is 3.21 eV. The fuzzy rule based system and characterization results are in accordance with each other with a minimal difference of less than 1%.
ISSN:1064-1246
1875-8967
DOI:10.3233/JIFS-219310