Advanced approach for oxygen transport and crystallization front calculation in Cz silicon crystal growth

•STR model accounts for anisotropy of normal Reynolds stresses.•STR model predicts Oxygen profiles in Cz 8″ Silicon crystals with 10% accuracy.•Computer simulation predicted the Oxygen reduction by 13% in Cz Si crystal growth. Modeling of oxygen transport during Czochralski (Cz) silicon crystal grow...

Full description

Saved in:
Bibliographic Details
Published in:Journal of crystal growth 2022-04, Vol.583, p.126493, Article 126493
Main Authors: Borisov, D., Artemyev, V., Kalaev, V., Smirnov, A., Kuliev, A., Zobel, F., Kunert, R., Turan, R., Aydin, O., Kabacelik, I.
Format: Article
Language:English
Subjects:
A1. GGDH
A1. LES
A1. Oxygen concentration
A1. RANS
A1. Reynolds stress tensor
A2. Czochralski silicon crystal growth process optimization
Anisotropy
Crystal growth
Crystallization
Crystals
Fourier transforms
Free surfaces
Geometric accuracy
Heat flux
Infrared analysis
Mass transport
Oxygen
Reynolds stress
Silicon
Tensors
Turbulence models
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:•STR model accounts for anisotropy of normal Reynolds stresses.•STR model predicts Oxygen profiles in Cz 8″ Silicon crystals with 10% accuracy.•Computer simulation predicted the Oxygen reduction by 13% in Cz Si crystal growth. Modeling of oxygen transport during Czochralski (Cz) silicon crystal growth still is a big challenge due to oxygen evacuation from the melt free surface, affected by strong anisotropy of turbulent mass transport. To predict the crystal oxygen concentration and crystallization front geometry with reasonable accuracy usually a 3D unsteady LES or DNS approach is required which demands significant computation resources and time. We present a new steady turbulence model using the extended hypothesis for modeling the Reynolds stress tensor, which accounts for different mechanisms of Reynolds stresses anisotropy and can be used in fast 2D engineering calculations. Several 8″ silicon crystals were grown in EKZ 3500 furnace with varying operating parameters. Wafers have been cut from different parts of the crystals and analyzed using the Fourier-transform infrared spectroscopy (FTIR) for oxygen concentration in facilities of Fraunhofer CSP and iTechSolar. The comparison between experimental and calculated results, which include oxygen concentration and interface deflection, is discussed in details. Time-averaged Reynolds stress tensor components as well as the turbulent heat fluxes components are compared between unsteady LES and steady RANS approaches.
ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2021.126493