A bioinspired flexible artificial mechanoreceptor based on VO2 insulator-metal transition memristor

• Published in: Journal of alloys and compounds 2022-08, Vol.911, p.165096, Article 165096
• Main Authors: Fang, Sheng Li, Han, Chuan Yu, Liu, Weihua, Han, Zheng Rong, Ma, Bo, Cui, Yi Lin, Fan, Shi Quan, Li, Xin, Wang, Xiao Li, Zhang, Guo He, Yin, Jun Qing, Huang, Xiao Dong, Geng, Li
• Format: Article
• Language: English
• Subjects: Artificial mechanoreceptor; Data integration; Flexible memristor; Insulator-metal transition; Mechanoreceptors; Memristors; Pressure sensors; Receptors; Titanium; Vanadium oxides; VO2
• ISSN: 0925-8388; 1873-4669
• DOI: 10.1016/j.jallcom.2022.165096

Inspired by biological mechanoreceptors, we present a flexible artificial mechanoreceptor (FAM) based on high-performance VO2 insulator-metal transition (IMT) memristor with the functions of sensing, spikes coding and information fusion for the anthropomorphic neurorobotics. The flexible VO2 IMT memristors with the structure of Ti/Pt/VO2/Pt via-hole show bi-directional threshold switching performance, good endurance (>2 ×109) and excellent flexibility (>103 bending cycles). The FAM comprised of three receptors (flexible pressure sensors) and one flexible VO2 IMT memristor is able to detect, code and fuse the pressure information from different receptors into spike trains similar to the biological SA-Ⅰ mechanoreceptors, laying the foundation for the flexible electronic skin of anthropomorphic neurorobotics in the future. •The presented artificial mechanoreceptor is fully flexible, satisfying the needs of flexible electronic skins of neurorobots.•The artificial mechanoreceptor can sense, code, and fuse the spatio-temporal pressure information into spike trains.•The VO2 IMT memristors show high performance with good endurance (>2 ×109) and excellent flexibility (>103 bending cycles).