Operating Characteristics of Semiconductor Quantum Well Lasers as Functions of the Waveguide Region Thickness

• Published in: Semiconductors (Woodbury, N.Y.) N.Y.), 2022-02, Vol.56 (2), p.115-121
• Main Authors: Sokolova, Z. N., Pikhtin, N. A, Slipchenko, S. O., Asryan, L. V.
• Format: Article
• Language: English
• Subjects: Confinement; Current density; Divergence; Electrons; Emitters; Emitters (electron); Lasers; Magnetic Materials; Magnetism; Physics; Physics and Astronomy; Quantum efficiency; Quantum well lasers; Quantum wells; Semiconductor lasers; Thickness; Threshold currents; Waveguides
• ISSN: 1063-7826; 1090-6479
• DOI: 10.1134/S106378262201016X

The performance characteristics of semiconductor lasers based on quantum wells (QWs) are theoretically studied as functions of the thickness of the waveguide region [optical confinement layer (OCL)]. The maximum modal gain, optical-confinement factor (in QWs, OCLs, and emitters), threshold current density, electron and hole densities (in QWs and OCLs), internal optical loss (in QWs, OCLs, and cladding layers), internal differential quantum efficiency, currents of stimulated and spontaneous recombination and the output optical power of the laser are calculated as functions of the OCL thickness. It is shown that up to pump current densities of 50 kA/cm 2 the dependence of the output power of the considered lasers on the OCL thickness is weak in the thickness range of 1.5–2.8 μm. This result is important for the development of high-brightness lasers, since such lasers use a wide waveguide to ensure low radiation divergence. It is shown that, at very high pump-current densities, the output power has a maximum as a function of the OCL width.