Effect of Neutron Irradiation on the Spectrum of Deep-Level Defects in GaAs Grown by Liquid-Phase Epitaxy in a Hydrogen and Argon Atmosphere

We present the results of experimental studies of the capacitance–voltage ( C–V ) characteristics and the spectra of deep-level transient spectroscopy (DLTS) of graded high-voltage p + – p 0 – i – n 0 GaAs diodes fabricated by liquid-phase epitaxy at a crystallization-onset temperatures of 900°C fro...

Full description

Saved in:
Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2022-02, Vol.56 (2), p.107-114
Main Authors: Sobolev, M. M., Soldatenkov, F. Yu
Format: Article
Language:English
Subjects:
Argon
Crystal defects
Crystallization
Deep level transient spectroscopy
Electrons
Epitaxial growth
Epitaxy
Gallium arsenide
Hydrogen
Impurities
Liquid phase epitaxy
Liquid phases
Magnetic Materials
Magnetism
Neutron irradiation
Neutrons
Physics
Physics and Astronomy
Spectra
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We present the results of experimental studies of the capacitance–voltage ( C–V ) characteristics and the spectra of deep-level transient spectroscopy (DLTS) of graded high-voltage p + – p 0 – i – n 0 GaAs diodes fabricated by liquid-phase epitaxy at a crystallization-onset temperatures of 900°C from one solution melt due to self doping with background impurities, in a hydrogen or argon atmosphere, before and after irradiation with neutrons. After irradiation with neutrons, the DLTS spectra reveal wide defect-cluster regions with acceptor-like negatively charged traps of the n 0 -type layer, resulting from the emission of electrons from states located above the middle of the band gap. It is found that the differences in the C–V characteristics of the structures grown in a hydrogen or argon atmosphere are due to the different doses of irradiation of p + – p 0 – i – n 0 GaAs structures and different degrees of compensation of shallow donor impurities by deep traps in the layers.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782622010158