The Effect of Synthesis and Heat Treatment Modes on the Local Structure of a Ge2Sb2Te5 Chalcogenide Semiconductor

Features of amorphous state‒crystal phase transitions have been studied by X-ray diffractometry and Raman spectroscopy in their dependence on methods for obtaining Ge 20 Sb 20.5 Te 51 chalcogenide semiconductor samples and their heat treatment, as well as changes in their structure and short-range a...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2022-03, Vol.56 (3), p.175-179
Main Authors: Garibova, S. N., Isaev, A. I., Mekhtieva, S. I., Ataeva, S. U., Alekberov, R. I.
Format: Article
Language:English
Subjects:
Atomic structure
Chalcogenides
Chemical bonds
Crystal structure
Heat treatment
Magnetic Materials
Magnetism
Phase transitions
Physics
Physics and Astronomy
Raman spectroscopy
Structural members
Substrates
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Summary:Features of amorphous state‒crystal phase transitions have been studied by X-ray diffractometry and Raman spectroscopy in their dependence on methods for obtaining Ge 20 Sb 20.5 Te 51 chalcogenide semiconductor samples and their heat treatment, as well as changes in their structure and short-range atomic order. It is shown that the Ge 20 Sb 20.5 Te 51 films synthesized by thermal evaporation on an unheated substrate are amorphous, while after heat treatment at 220 and 400°C they transform into the crystalline phase with a cubic and hexagonal structure. The chemical bonds and basic structural elements that form the matrix of the investigated objects have been established and the changes occurring in them during heat treatment have been found.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782622020063