Functional Dependences of the Maximum Energy Density of the Spectral Component of Stimulated Picosecond Emission by GaAs upon Gain Saturation. The Residual Characteristic Emission Relaxation Time

During high-power optical picosecond pumping of the GaAs layer of an Al x Ga 1 –  x As–GaAs–Al x Ga 1 –  x As heterostructure, stimulated picosecond emission arises in it. It has been revealed experimentally how, upon gain saturation of the emission, the maximum energy density of the spectral compon...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2022-03, Vol.56 (3), p.145-152
Main Authors: Ageeva, N. N., Bronevoi, I. L., Zabegaev, D. N., Krivonosov, A. N.
Format: Article
Language:English
Subjects:
Diameters
Emission
Gallium arsenide
Heterostructures
Magnetic Materials
Magnetism
Optical pumping
Physics
Physics and Astronomy
Relaxation time
Saturation
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Summary:During high-power optical picosecond pumping of the GaAs layer of an Al x Ga 1 –  x As–GaAs–Al x Ga 1 –  x As heterostructure, stimulated picosecond emission arises in it. It has been revealed experimentally how, upon gain saturation of the emission, the maximum energy density of the spectral component of emission and the time for reaching this maximum depend on the photon energy and the gain and relaxation parameters of the component. These dependences imply that these density and time are affected by the slowdown of the transport of nonequilibrium carriers in the energy space. This slowdown is caused by the interaction of carriers with emission. It has been found that as the diameter of the active region tends to zero the measured characteristic relaxation time of the component tends to a theoretical universal residual relaxation time, which is prolonged due to the indicated slowdown of transport.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782622020014