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Functional Dependences of the Maximum Energy Density of the Spectral Component of Stimulated Picosecond Emission by GaAs upon Gain Saturation. The Residual Characteristic Emission Relaxation Time
During high-power optical picosecond pumping of the GaAs layer of an Al x Ga 1 – x As–GaAs–Al x Ga 1 – x As heterostructure, stimulated picosecond emission arises in it. It has been revealed experimentally how, upon gain saturation of the emission, the maximum energy density of the spectral compon...
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| Published in: | Semiconductors (Woodbury, N.Y.) N.Y.), 2022-03, Vol.56 (3), p.145-152 |
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| Language: | English |
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| cited_by | cdi_FETCH-LOGICAL-c2004-148bc9f8f0f5183ab6f88bb929204dd056e601c61f78cbc0af5cc1a3b771365b3 |
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| cites | cdi_FETCH-LOGICAL-c2004-148bc9f8f0f5183ab6f88bb929204dd056e601c61f78cbc0af5cc1a3b771365b3 |
| container_end_page | 152 |
| container_issue | 3 |
| container_start_page | 145 |
| container_title | Semiconductors (Woodbury, N.Y.) |
| container_volume | 56 |
| creator | Ageeva, N. N. Bronevoi, I. L. Zabegaev, D. N. Krivonosov, A. N. |
| description | During high-power optical picosecond pumping of the GaAs layer of an Al
x
Ga
1 –
x
As–GaAs–Al
x
Ga
1 –
x
As heterostructure, stimulated picosecond emission arises in it. It has been revealed experimentally how, upon gain saturation of the emission, the maximum energy density of the spectral component of emission and the time for reaching this maximum depend on the photon energy and the gain and relaxation parameters of the component. These dependences imply that these density and time are affected by the slowdown of the transport of nonequilibrium carriers in the energy space. This slowdown is caused by the interaction of carriers with emission. It has been found that as the diameter of the active region tends to zero the measured characteristic relaxation time of the component tends to a theoretical universal residual relaxation time, which is prolonged due to the indicated slowdown of transport. |
| doi_str_mv | 10.1134/S1063782622020014 |
| format | article |
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x
Ga
1 –
x
As–GaAs–Al
x
Ga
1 –
x
As heterostructure, stimulated picosecond emission arises in it. It has been revealed experimentally how, upon gain saturation of the emission, the maximum energy density of the spectral component of emission and the time for reaching this maximum depend on the photon energy and the gain and relaxation parameters of the component. These dependences imply that these density and time are affected by the slowdown of the transport of nonequilibrium carriers in the energy space. This slowdown is caused by the interaction of carriers with emission. It has been found that as the diameter of the active region tends to zero the measured characteristic relaxation time of the component tends to a theoretical universal residual relaxation time, which is prolonged due to the indicated slowdown of transport.</description><identifier>ISSN: 1063-7826</identifier><identifier>EISSN: 1090-6479</identifier><identifier>DOI: 10.1134/S1063782622020014</identifier><language>eng</language><publisher>Moscow: Pleiades Publishing</publisher><subject>Diameters ; Emission ; Gallium arsenide ; Heterostructures ; Magnetic Materials ; Magnetism ; Optical pumping ; Physics ; Physics and Astronomy ; Relaxation time ; Saturation</subject><ispartof>Semiconductors (Woodbury, N.Y.), 2022-03, Vol.56 (3), p.145-152</ispartof><rights>Pleiades Publishing, Ltd. 2022. ISSN 1063-7826, Semiconductors, 2022, Vol. 56, No. 3, pp. 145–152. © Pleiades Publishing, Ltd., 2022. ISSN 1063-7826, Semiconductors, 2022. © Pleiades Publishing, Ltd., 2022. Russian Text © The Author(s), 2022, published in Fizika i Tekhnika Poluprovodnikov, 2022, Vol. 56, No. 3, pp. 307–314.</rights><rights>COPYRIGHT 2022 Springer</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c2004-148bc9f8f0f5183ab6f88bb929204dd056e601c61f78cbc0af5cc1a3b771365b3</citedby><cites>FETCH-LOGICAL-c2004-148bc9f8f0f5183ab6f88bb929204dd056e601c61f78cbc0af5cc1a3b771365b3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Ageeva, N. N.</creatorcontrib><creatorcontrib>Bronevoi, I. L.</creatorcontrib><creatorcontrib>Zabegaev, D. N.</creatorcontrib><creatorcontrib>Krivonosov, A. N.</creatorcontrib><title>Functional Dependences of the Maximum Energy Density of the Spectral Component of Stimulated Picosecond Emission by GaAs upon Gain Saturation. The Residual Characteristic Emission Relaxation Time</title><title>Semiconductors (Woodbury, N.Y.)</title><addtitle>Semiconductors</addtitle><description>During high-power optical picosecond pumping of the GaAs layer of an Al
x
Ga
1 –
x
As–GaAs–Al
x
Ga
1 –
x
As heterostructure, stimulated picosecond emission arises in it. It has been revealed experimentally how, upon gain saturation of the emission, the maximum energy density of the spectral component of emission and the time for reaching this maximum depend on the photon energy and the gain and relaxation parameters of the component. These dependences imply that these density and time are affected by the slowdown of the transport of nonequilibrium carriers in the energy space. This slowdown is caused by the interaction of carriers with emission. It has been found that as the diameter of the active region tends to zero the measured characteristic relaxation time of the component tends to a theoretical universal residual relaxation time, which is prolonged due to the indicated slowdown of transport.</description><subject>Diameters</subject><subject>Emission</subject><subject>Gallium arsenide</subject><subject>Heterostructures</subject><subject>Magnetic Materials</subject><subject>Magnetism</subject><subject>Optical pumping</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Relaxation time</subject><subject>Saturation</subject><issn>1063-7826</issn><issn>1090-6479</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2022</creationdate><recordtype>article</recordtype><recordid>eNp1kc9q3DAQxk1poWmaB-hN0LO3Gv-R5OOy3aSFhIbs5mxkebRRsCVXkiH7fHmxytmWHErQQYPm-30avsmyL0BXAGX1bQeUlVwUrChoQSlU77IzoA3NWcWb90vNynzpf8w-hfCYFCDq6ix7vpytisZZOZDvOKHt0SoMxGkSH5DcyCczziPZWvSHY1LYYOLxX3c3oYo-kRs3Ts6ijUtnFxMyyIg9uTXKBVTO9mQ7mhDSP6Q7kiu5DmRORKqMJTsZZy-XIVZkn2zvMJh-XmwfpJcqojchGvVqcYeDfHoByN6M-Dn7oOUQ8OLvfZ7dX273mx_59a-rn5v1da5SIlUOlehUo4WmugZRyo5pIbquKZqCVn1Pa4aMgmKguVCdolLXSoEsO86hZHVXnmdfT76Td79nDLF9dLNPyYW2YJyzEqCGpFqdVAc5YGusdikilU6PY4rDojbpfc0pr6CgXCQAToDyLgSPup28GaU_tkDbZbntf8tNTHFiQtLaA_rXUd6G_gBti6jl</recordid><startdate>20220301</startdate><enddate>20220301</enddate><creator>Ageeva, N. N.</creator><creator>Bronevoi, I. L.</creator><creator>Zabegaev, D. N.</creator><creator>Krivonosov, A. N.</creator><general>Pleiades Publishing</general><general>Springer</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20220301</creationdate><title>Functional Dependences of the Maximum Energy Density of the Spectral Component of Stimulated Picosecond Emission by GaAs upon Gain Saturation. The Residual Characteristic Emission Relaxation Time</title><author>Ageeva, N. N. ; Bronevoi, I. L. ; Zabegaev, D. N. ; Krivonosov, A. N.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c2004-148bc9f8f0f5183ab6f88bb929204dd056e601c61f78cbc0af5cc1a3b771365b3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2022</creationdate><topic>Diameters</topic><topic>Emission</topic><topic>Gallium arsenide</topic><topic>Heterostructures</topic><topic>Magnetic Materials</topic><topic>Magnetism</topic><topic>Optical pumping</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>Relaxation time</topic><topic>Saturation</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ageeva, N. N.</creatorcontrib><creatorcontrib>Bronevoi, I. L.</creatorcontrib><creatorcontrib>Zabegaev, D. N.</creatorcontrib><creatorcontrib>Krivonosov, A. N.</creatorcontrib><collection>CrossRef</collection><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Ageeva, N. N.</au><au>Bronevoi, I. L.</au><au>Zabegaev, D. N.</au><au>Krivonosov, A. N.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Functional Dependences of the Maximum Energy Density of the Spectral Component of Stimulated Picosecond Emission by GaAs upon Gain Saturation. The Residual Characteristic Emission Relaxation Time</atitle><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle><stitle>Semiconductors</stitle><date>2022-03-01</date><risdate>2022</risdate><volume>56</volume><issue>3</issue><spage>145</spage><epage>152</epage><pages>145-152</pages><issn>1063-7826</issn><eissn>1090-6479</eissn><abstract>During high-power optical picosecond pumping of the GaAs layer of an Al
x
Ga
1 –
x
As–GaAs–Al
x
Ga
1 –
x
As heterostructure, stimulated picosecond emission arises in it. It has been revealed experimentally how, upon gain saturation of the emission, the maximum energy density of the spectral component of emission and the time for reaching this maximum depend on the photon energy and the gain and relaxation parameters of the component. These dependences imply that these density and time are affected by the slowdown of the transport of nonequilibrium carriers in the energy space. This slowdown is caused by the interaction of carriers with emission. It has been found that as the diameter of the active region tends to zero the measured characteristic relaxation time of the component tends to a theoretical universal residual relaxation time, which is prolonged due to the indicated slowdown of transport.</abstract><cop>Moscow</cop><pub>Pleiades Publishing</pub><doi>10.1134/S1063782622020014</doi><tpages>8</tpages></addata></record> |
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| identifier | ISSN: 1063-7826 |
| ispartof | Semiconductors (Woodbury, N.Y.), 2022-03, Vol.56 (3), p.145-152 |
| issn | 1063-7826 1090-6479 |
| language | eng |
| recordid | cdi_proquest_journals_2677631151 |
| source | Springer Link |
| subjects | Diameters Emission Gallium arsenide Heterostructures Magnetic Materials Magnetism Optical pumping Physics Physics and Astronomy Relaxation time Saturation |
| title | Functional Dependences of the Maximum Energy Density of the Spectral Component of Stimulated Picosecond Emission by GaAs upon Gain Saturation. The Residual Characteristic Emission Relaxation Time |
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