Impact of P/E Stress on Trap Profiles in Bandgap-Engineered Tunneling Oxide of 3D NAND Flash Memory

The quantitative characteristics of traps created in the bandgap-engineered tunneling oxide (BE-TOX) layer and block layer after program/erase (P/E) stress-cycling in a 3D NAND flash memory were investigated. The trap spectroscopy by charge injection and sensing technique was used to obtain the dist...

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Bibliographic Details
Published in:IEEE access 2022, Vol.10, p.62423-62428
Main Authors: Yoon, Gilsang, Ko, Donghyun, Park, Jounghun, Kim, Donghwi, Kim, Jungsik, Lee, Jeong-Soo
Format: Article
Language:English
Subjects:
3D NAND flash memory
bandgap-engineered tunneling
Charge injection
Cycles
Electron traps
Energy gap
Energy states
Flash memories
Flash memory (computers)
Logic gates
program/erase cycling
Stress
Three-dimensional displays
trap profile
TSCIS
Tunneling
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Summary:The quantitative characteristics of traps created in the bandgap-engineered tunneling oxide (BE-TOX) layer and block layer after program/erase (P/E) stress-cycling in a 3D NAND flash memory were investigated. The trap spectroscopy by charge injection and sensing technique was used to obtain the distribution of traps in these layers. In the BE-TOX layer, significant traps were generated around 1.3 eV in the nitrogen-doped layer (N1) and increased by 48% in the fresh cell after P/E stress-cycling. The H bonds in the N1 are more likely to break during the stress-cycling and create neutral \equiv \mathrm {SiO}^{\bullet } traps. In the block layer, however, trap generation was negligible after stress-cycling.
ISSN:2169-3536
2169-3536
DOI:10.1109/ACCESS.2022.3182397