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Delta-Doping for Enhanced III-V Tunnel Junction Performance

We show that delta-doping boosts the performance of tunnel junctions (TJs) used as interconnects in III-V multijunction solar cells by orders of magnitude. The peak current of our baseline TJ design consisting of p-GaAs/n-GaAs surrounded by Ga 0.51 In 0.49 P clads is improved by a factor of ∼5 × 10...

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Bibliographic Details
Published in:IEEE journal of photovoltaics 2022-07, Vol.12 (4), p.976-981
Main Authors: Sun, Yukun, Fan, Shizhao, Jung, Daehwan, Hool, Ryan D, Li, Brian, Vaisman, Michelle, Lee, Minjoo
Format: Article
Language:English
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Summary:We show that delta-doping boosts the performance of tunnel junctions (TJs) used as interconnects in III-V multijunction solar cells by orders of magnitude. The peak current of our baseline TJ design consisting of p-GaAs/n-GaAs surrounded by Ga 0.51 In 0.49 P clads is improved by a factor of ∼5 × 10 5 . The relative benefits of delta-doping are even stronger in TJs based on wider-bandgap materials with reduced optical absorption. Importantly, we find that delta-doped TJs can survive the thermal loads that would be encountered during growth of additional subcells. Delta doping is a simple and versatile method to improve TJ performance that can be implemented by virtually any epitaxial growth method.
ISSN:2156-3381
2156-3403
DOI:10.1109/JPHOTOV.2022.3176217