Investigation of multi-photoconductance state induced by light-sensitive defect in TiOx-based memristor

A TiOx switching layer with a thickness of ∼83 nm is prepared on a F-doped SnO2 (FTO) substrate by the sol-gel method to fabricate the Ag/TiOx/FTO memristor. The resistive switching memory behavior observed in the developed memristor can be efficiently modulated by the light. After modulating the li...

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Bibliographic Details
Published in:Applied physics letters 2022-06, Vol.120 (25)
Main Authors: Yan, Bingtao, Kuang, Dalong, Wang, Wenhua, Wang, Yuchen, Sun, Bai, Zhou, Guangdong
Format: Article
Language:English
Subjects:
Applied physics
Luminous intensity
Memristors
Sol-gel processes
Substrates
Switching
Thickness
Tin dioxide
Titanium oxides
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Summary:A TiOx switching layer with a thickness of ∼83 nm is prepared on a F-doped SnO2 (FTO) substrate by the sol-gel method to fabricate the Ag/TiOx/FTO memristor. The resistive switching memory behavior observed in the developed memristor can be efficiently modulated by the light. After modulating the light-intensity from 2.5 to 12.5 mW/mm2, five discrete photoconductance states can be obtained. The competition and synergy of the oxygen vacancy and Ag atom-based filament are responsible for the resistance switching (RS) memory behavior. The multi-photoconductance states are ascribed to the electron excited by the external light transports along the conduction filament. The programmable multi-photoconductance states provide a realistic RS memory behavior to mimic the function of a visual system.
ISSN:0003-6951
1077-3118
DOI:10.1063/5.0097106