Ultraefficient resistance switching between charge ordered phases in 1T-TaS2 with a single picosecond electrical pulse

Progress in high-performance computing demands significant advances in memory technology. Among novel memory technologies that promise efficient device operation on a sub-ns timescale, resistance switching between charge ordered phases of 1T-TaS2 has shown to be potentially useful for development of...

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Bibliographic Details
Published in:Applied physics letters 2022-06, Vol.120 (25)
Main Authors: Venturini, Rok, Mraz, Anže, Vaskivskyi, Igor, Vaskivskyi, Yevhenii, Svetin, Damjan, Mertelj, Tomaž, Pavlovič, Leon, Cheng, Jing, Chen, Genyu, Amarasinghe, Priyanthi, Qadri, Syed B., Trivedi, Sudhir B., Sobolewski, Roman, Mihailovic, Dragan
Format: Article
Language:English
Subjects:
Applied physics
ENGINEERING
Low resistance
Memory devices
Optoelectronics
Photoexcitation
Physics
Pulse propagation
Substrates
Switching
Temporal resolution
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Summary:Progress in high-performance computing demands significant advances in memory technology. Among novel memory technologies that promise efficient device operation on a sub-ns timescale, resistance switching between charge ordered phases of 1T-TaS2 has shown to be potentially useful for development of high-speed, energy efficient nonvolatile memory devices. Measurement of the electrical operation of such devices in the picosecond regime is technically challenging and hitherto still largely unexplored. Here, we use an optoelectronic “laboratory-on-a-chip” experiment for measurement of ultrafast memory switching, enabling accurate measurement of electrical switching parameters with 100 fs temporal resolution. Photoexcitation and electro-optic sampling on a (Cd,Mn)Te substrate are used to generate and, subsequently, measure electrical pulse propagation with intra-band excitation and sub-gap probing, respectively. We demonstrate high contrast nonvolatile resistance switching from high to low resistance states of a 1T-TaS2 device using single sub-2 ps electrical pulses. Using detailed modeling, we find that the switching energy density per unit area is exceptionally small, E A = 9.4 fJ/μm2. The speed and energy efficiency of an electronic “write” process place the 1T-TaS2 devices into a category of their own among new generation nonvolatile memory devices.
ISSN:0003-6951
1077-3118
DOI:10.1063/5.0096850