P‐14: Effects of Film Density on IGZO Based TFT Device Reliability

Density effects of IGZO films were studied based on DFT calculations, and the electrical and physical properties between the high‐density film and the conventional film were compared. As the density increased, the carrier concentration, hole mobility, and the optical energy band gap of the IGZO film...

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Bibliographic Details
Published in:SID International Symposium Digest of technical papers 2022-06, Vol.53 (1), p.1089-1091
Main Authors: Park, Jaeyoon, Kim, Yong-Sung, Baeck, Ju-Heyuck, Park, Sehee, Seo, Jungseok, Noh, Jiyong, Park, Kwon-Shik, Kim, JeomJae, Yoon, SooYoung
Format: Article
Language:English
Subjects:
a-IGZO
ab-initio
Carrier density
coplanar
DFT
Energy bands
Energy gap
high-density
Hole mobility
Indium gallium zinc oxide
NBTiS
Oxide TFT
PBTS
Physical properties
Reliability
stability
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Description
Summary:Density effects of IGZO films were studied based on DFT calculations, and the electrical and physical properties between the high‐density film and the conventional film were compared. As the density increased, the carrier concentration, hole mobility, and the optical energy band gap of the IGZO film increased. Additionally, micro‐pore defects were not observed in the high‐density film unlike the conventional film through HR‐TEM cross‐sectional analysis. Also, we fabricated coplanar TFT devices with different density IGZO films and conducted PBTS and NBTiS reliability tests. The device with high‐density IGZO film was showed superior reliability characteristics
ISSN:0097-966X
2168-0159
DOI:10.1002/sdtp.15689