9‐1: Evaluation of X‐ray Resistance of Submicron‐Size c‐Axis Aligned Crystalline‐Oxide Semiconductor

We have investigated the total ionizing dose effect by X‐rays, which is a degradation mode of a single transistor, to find the radiation resistance of oxide semiconductor large scale integrated circuit. At 3000 Gy corresponding to the absorbed dose for 30 years in a space environment, or more specif...

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Bibliographic Details
Published in:SID International Symposium Digest of technical papers 2022-06, Vol.53 (1), p.78-81
Main Authors: Tsuda, Kazuki, Takahashi, Hironobu, Hamada, Toshiki, Saito, Satoru, Baba, Haruyuki, Takahashi, Masahiro, Obonai, Toshimitsu, Koezuka, Junichi, Kunitake, Hitoshi, Kobayashi, Daisuke, Tajima, Michio, Yamazaki, Shunpei
Format: Article
Language:English
Subjects:
Aerospace environments
Degradation
Geosynchronous orbits
Integrated circuits
Large scale integration
Oxide semiconductor
Radiation sensor
Radiation tolerance
radioactive
Semiconductor devices
Threshold voltage
Transistors
X-ray
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Summary:We have investigated the total ionizing dose effect by X‐rays, which is a degradation mode of a single transistor, to find the radiation resistance of oxide semiconductor large scale integrated circuit. At 3000 Gy corresponding to the absorbed dose for 30 years in a space environment, or more specifically, on a geostationary orbit, an oxide semiconductor field‐effect transistor showed a negative drift in threshold voltage of less than 300m V and substantially no degradation in subthreshold slope and mobility. After 60 hours from the irradiation, approximately 40% of the threshold voltage variation was recovered.
ISSN:0097-966X
2168-0159
DOI:10.1002/sdtp.15421