Light-induced giant and persistent changes in the converse magnetoelastic effects in Ni/BaTiO3 multiferroic heterostructure

Magnetoelastic and magnetoelectric coupling in the artificial multiferroic heterostructures facilitate valuable features for device applications such as magnetic field sensors and electric write magnetic-read memory devices. In a ferromagnetic/ferroelectric heterostructures, the strain mediated coup...

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Bibliographic Details
Published in:arXiv.org 2022-07
Main Authors: Bagri, Anita, Anupam Jana, Panchal, Gyanendra, Rakhul Raj, Gupta, Mukul, Reddy, V R, Deodatta Moreshwar Phase, Choudhary, Ram Janay
Format: Article
Language:English
Subjects:
Access control
Barium titanates
Coupling
Domain walls
Electric fields
Electrostriction
Ferroelectric materials
Ferroelectricity
Ferromagnetic phases
Ferromagnetism
Film growth
Heterostructures
Illumination
Light
Magnetic fields
Magnetostriction
Memory devices
Multiferroic materials
Perturbation
Piezoelectricity
Piezomagnetism
Random access memory
Room temperature
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Summary:Magnetoelastic and magnetoelectric coupling in the artificial multiferroic heterostructures facilitate valuable features for device applications such as magnetic field sensors and electric write magnetic-read memory devices. In a ferromagnetic/ferroelectric heterostructures, the strain mediated coupling exploits piezoelectricity/electrostriction in ferroelectric phase and magnetostriction/piezomagnetism in ferromagnetic phase. Such verity of these combined effect can be manipulated by an external perturbation, such as electric field, temperature or magnetic field. Here, we demonstrate the remote-controlled tunability of these effects under the visible, coherent and polarized light. The combined surface and bulk magnetic study of domain-correlated Ni/BaTiO3 heterostructure reveals that the system is strong sensitive about the light illumination via the combined effect of converse piezoelectric, magnetoelastic coupling and converse magnetostriction. Well-defined ferroelastic domain structure is fully transferred from a tetragonal ferroelectric to magnetostrictive layer via interface strain transfer during the film growth. The visible light illumination is used to manipulate the original ferromagnetic microstructure by the light-induced domain wall motion in ferroelectric, consequently the domain wall motion in the ferromagnetic layer. Our findings mimic the attractive remote-controlled ferroelectric random-access memory write and magnetic random-access memory read application scenarios, hence, can be proven as a novel perspective for room temperature device applications.
ISSN:2331-8422