Silicidation of Carbide Phases in the Ti–Ta–C and Ti–Zr–C Systems in a Gaseous SiO Atmosphere

— We have studied silicidation of powders of carbide phases in the Ti–Ta–C and Ti–Zr–C systems in a gaseous silicon monoxide atmosphere at 1400°C. The results demonstrate that the silicidation of the carbide phases in the Ti–Ta–C and Ti–Zr–C systems has a selective character. Silicidation selectivit...

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Bibliographic Details
Published in:Inorganic materials 2022-05, Vol.58 (5), p.493-500
Main Authors: Belyaev, I. M., Istomin, P. V., Istomina, E. I.
Format: Article
Language:English
Subjects:
Chemistry
Chemistry and Materials Science
Industrial Chemistry/Chemical Engineering
Inorganic Chemistry
Materials Science
Phases
Selectivity
Silicides
Tantalum
Tantalum compounds
Titanium carbide
Titanium silicon carbide
Zirconium
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Summary:— We have studied silicidation of powders of carbide phases in the Ti–Ta–C and Ti–Zr–C systems in a gaseous silicon monoxide atmosphere at 1400°C. The results demonstrate that the silicidation of the carbide phases in the Ti–Ta–C and Ti–Zr–C systems has a selective character. Silicidation selectivity shows up in that, in carbide mixtures containing up to 50 mol % TiC, the only siliciding treatment products are zirconium and tantalum silicide phases: ZrSi, Ta 5 Si 3 , and TaSi 2 . At TiC contents of 80 mol % and above in the Ti–Ta–C system, silicidation leads to the formation of the Ti 3 SiC 2 MAX phase.
ISSN:0020-1685
1608-3172
DOI:10.1134/S002016852204001X