RETRACTED ARTICLE: Tailoring of optical properties of Se80Te20-xInx films by annealing process

Bulk chalcogenide glass materials of Se 80 Te 20- x In x ( x  = 0, 3, 6, 9 and 11) were prepared via the melting-quenching technique. Se 80 Te 20- x In x thin films were evaporated thermally on glass substrates. The results of this study revealed that In doping and annealing time resulted in signifi...

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Bibliographic Details
Published in:Applied physics. A, Materials science & processing Materials science & processing, 2022, Vol.128 (8), Article 643
Main Authors: Abdelalim, Youssef H., Sakr, Abdel-Hamid A., El-Ghanam, S. M., Hamad, Mahmoud A.
Format: Article
Language:English
Subjects:
Annealing
Applied physics
Characterization and Evaluation of Materials
Condensed Matter Physics
Crystallites
Energy gap
Glass substrates
Lattice strain
Machines
Manufacturing
Materials science
Nanotechnology
Optical and Electronic Materials
Optical properties
Physical properties
Physics
Physics and Astronomy
Processes
Refractivity
Surfaces and Interfaces
Thin Films
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Summary:Bulk chalcogenide glass materials of Se 80 Te 20- x In x ( x  = 0, 3, 6, 9 and 11) were prepared via the melting-quenching technique. Se 80 Te 20- x In x thin films were evaporated thermally on glass substrates. The results of this study revealed that In doping and annealing time resulted in significant tailoring of some physical properties of Se 80 Te 20- x In x thin films. The annealing process changes the amorphous nature of Se 80 Te 20- x In x thin films to a crystal one. As both In content and annealing time increase, crystallite size decreases and internal lattice strain increases for all samples except those with x  = 11. Refractive indices for Se 80 Te 20- x In x thin films were fitted according to the main parameters of the single-oscillator model. It was also discovered that Se 80 Te 20- x In x thin films have a high absorption of high-energy photons. The increasing annealing time improves the refractive index. The bandgap got smaller when the annealing time was increased.
ISSN:0947-8396
1432-0630
DOI:10.1007/s00339-022-05736-1