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RETRACTED ARTICLE: Tailoring of optical properties of Se80Te20-xInx films by annealing process
Bulk chalcogenide glass materials of Se 80 Te 20- x In x ( x = 0, 3, 6, 9 and 11) were prepared via the melting-quenching technique. Se 80 Te 20- x In x thin films were evaporated thermally on glass substrates. The results of this study revealed that In doping and annealing time resulted in signifi...
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Published in: | Applied physics. A, Materials science & processing Materials science & processing, 2022, Vol.128 (8), Article 643 |
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container_title | Applied physics. A, Materials science & processing |
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creator | Abdelalim, Youssef H. Sakr, Abdel-Hamid A. El-Ghanam, S. M. Hamad, Mahmoud A. |
description | Bulk chalcogenide glass materials of Se
80
Te
20-
x
In
x
(
x
= 0, 3, 6, 9 and 11) were prepared via the melting-quenching technique. Se
80
Te
20-
x
In
x
thin films were evaporated thermally on glass substrates. The results of this study revealed that In doping and annealing time resulted in significant tailoring of some physical properties of Se
80
Te
20-
x
In
x
thin films. The annealing process changes the amorphous nature of Se
80
Te
20-
x
In
x
thin films to a crystal one. As both In content and annealing time increase, crystallite size decreases and internal lattice strain increases for all samples except those with
x
= 11. Refractive indices for Se
80
Te
20-
x
In
x
thin films were fitted according to the main parameters of the single-oscillator model. It was also discovered that Se
80
Te
20-
x
In
x
thin films have a high absorption of high-energy photons. The increasing annealing time improves the refractive index. The bandgap got smaller when the annealing time was increased. |
doi_str_mv | 10.1007/s00339-022-05736-1 |
format | article |
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80
Te
20-
x
In
x
(
x
= 0, 3, 6, 9 and 11) were prepared via the melting-quenching technique. Se
80
Te
20-
x
In
x
thin films were evaporated thermally on glass substrates. The results of this study revealed that In doping and annealing time resulted in significant tailoring of some physical properties of Se
80
Te
20-
x
In
x
thin films. The annealing process changes the amorphous nature of Se
80
Te
20-
x
In
x
thin films to a crystal one. As both In content and annealing time increase, crystallite size decreases and internal lattice strain increases for all samples except those with
x
= 11. Refractive indices for Se
80
Te
20-
x
In
x
thin films were fitted according to the main parameters of the single-oscillator model. It was also discovered that Se
80
Te
20-
x
In
x
thin films have a high absorption of high-energy photons. The increasing annealing time improves the refractive index. The bandgap got smaller when the annealing time was increased.</description><identifier>ISSN: 0947-8396</identifier><identifier>EISSN: 1432-0630</identifier><identifier>DOI: 10.1007/s00339-022-05736-1</identifier><language>eng</language><publisher>Berlin/Heidelberg: Springer Berlin Heidelberg</publisher><subject>Annealing ; Applied physics ; Characterization and Evaluation of Materials ; Condensed Matter Physics ; Crystallites ; Energy gap ; Glass substrates ; Lattice strain ; Machines ; Manufacturing ; Materials science ; Nanotechnology ; Optical and Electronic Materials ; Optical properties ; Physical properties ; Physics ; Physics and Astronomy ; Processes ; Refractivity ; Surfaces and Interfaces ; Thin Films</subject><ispartof>Applied physics. A, Materials science & processing, 2022, Vol.128 (8), Article 643</ispartof><rights>The Author(s), under exclusive licence to Springer-Verlag GmbH, DE part of Springer Nature 2022. Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c1641-5120442adfbbc50f250ce231af506255268d9516e01d901787087808829961e33</citedby><cites>FETCH-LOGICAL-c1641-5120442adfbbc50f250ce231af506255268d9516e01d901787087808829961e33</cites><orcidid>0000-0002-1863-0276</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Abdelalim, Youssef H.</creatorcontrib><creatorcontrib>Sakr, Abdel-Hamid A.</creatorcontrib><creatorcontrib>El-Ghanam, S. M.</creatorcontrib><creatorcontrib>Hamad, Mahmoud A.</creatorcontrib><title>RETRACTED ARTICLE: Tailoring of optical properties of Se80Te20-xInx films by annealing process</title><title>Applied physics. A, Materials science & processing</title><addtitle>Appl. Phys. A</addtitle><description>Bulk chalcogenide glass materials of Se
80
Te
20-
x
In
x
(
x
= 0, 3, 6, 9 and 11) were prepared via the melting-quenching technique. Se
80
Te
20-
x
In
x
thin films were evaporated thermally on glass substrates. The results of this study revealed that In doping and annealing time resulted in significant tailoring of some physical properties of Se
80
Te
20-
x
In
x
thin films. The annealing process changes the amorphous nature of Se
80
Te
20-
x
In
x
thin films to a crystal one. As both In content and annealing time increase, crystallite size decreases and internal lattice strain increases for all samples except those with
x
= 11. Refractive indices for Se
80
Te
20-
x
In
x
thin films were fitted according to the main parameters of the single-oscillator model. It was also discovered that Se
80
Te
20-
x
In
x
thin films have a high absorption of high-energy photons. The increasing annealing time improves the refractive index. The bandgap got smaller when the annealing time was increased.</description><subject>Annealing</subject><subject>Applied physics</subject><subject>Characterization and Evaluation of Materials</subject><subject>Condensed Matter Physics</subject><subject>Crystallites</subject><subject>Energy gap</subject><subject>Glass substrates</subject><subject>Lattice strain</subject><subject>Machines</subject><subject>Manufacturing</subject><subject>Materials science</subject><subject>Nanotechnology</subject><subject>Optical and Electronic Materials</subject><subject>Optical properties</subject><subject>Physical properties</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Processes</subject><subject>Refractivity</subject><subject>Surfaces and Interfaces</subject><subject>Thin Films</subject><issn>0947-8396</issn><issn>1432-0630</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2022</creationdate><recordtype>article</recordtype><recordid>eNp9kNFKwzAUhoMoOKcv4FXA6-hJ0qSJd6N2OhgIs94asi6Vjq6tyQbb25tawTvPTTjh__4DH0K3FO4pQPoQADjXBBgjIFIuCT1DE5rwuEoO52gCOkmJ4lpeoqsQthAnYWyCPlZ5sZplRf6EZ6tikS3zR1zYuul83X7irsJdv69L2-Ded73z-9qF4ffNKSgcA3JctEdc1c0u4PUJ27Z1thnIGC9dCNfoorJNcDe_7xS9z_MieyHL1-dFNluSksqEEkEZJAmzm2q9LgVUTEDpGKe2EiCZEEyqjRZUOqAbDTRVKahUgVJMa0kd51N0N_bGu18HF_Zm2x18G0-ayMYSzlMVU2xMlb4LwbvK9L7eWX8yFMzg0YweTfRofjwaGiE-QqEfnDj_V_0P9Q3ZIHFs</recordid><startdate>2022</startdate><enddate>2022</enddate><creator>Abdelalim, Youssef H.</creator><creator>Sakr, Abdel-Hamid A.</creator><creator>El-Ghanam, S. M.</creator><creator>Hamad, Mahmoud A.</creator><general>Springer Berlin Heidelberg</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><orcidid>https://orcid.org/0000-0002-1863-0276</orcidid></search><sort><creationdate>2022</creationdate><title>RETRACTED ARTICLE: Tailoring of optical properties of Se80Te20-xInx films by annealing process</title><author>Abdelalim, Youssef H. ; Sakr, Abdel-Hamid A. ; El-Ghanam, S. M. ; Hamad, Mahmoud A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c1641-5120442adfbbc50f250ce231af506255268d9516e01d901787087808829961e33</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2022</creationdate><topic>Annealing</topic><topic>Applied physics</topic><topic>Characterization and Evaluation of Materials</topic><topic>Condensed Matter Physics</topic><topic>Crystallites</topic><topic>Energy gap</topic><topic>Glass substrates</topic><topic>Lattice strain</topic><topic>Machines</topic><topic>Manufacturing</topic><topic>Materials science</topic><topic>Nanotechnology</topic><topic>Optical and Electronic Materials</topic><topic>Optical properties</topic><topic>Physical properties</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>Processes</topic><topic>Refractivity</topic><topic>Surfaces and Interfaces</topic><topic>Thin Films</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Abdelalim, Youssef H.</creatorcontrib><creatorcontrib>Sakr, Abdel-Hamid A.</creatorcontrib><creatorcontrib>El-Ghanam, S. M.</creatorcontrib><creatorcontrib>Hamad, Mahmoud A.</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics. A, Materials science & processing</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Abdelalim, Youssef H.</au><au>Sakr, Abdel-Hamid A.</au><au>El-Ghanam, S. M.</au><au>Hamad, Mahmoud A.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>RETRACTED ARTICLE: Tailoring of optical properties of Se80Te20-xInx films by annealing process</atitle><jtitle>Applied physics. A, Materials science & processing</jtitle><stitle>Appl. Phys. A</stitle><date>2022</date><risdate>2022</risdate><volume>128</volume><issue>8</issue><artnum>643</artnum><issn>0947-8396</issn><eissn>1432-0630</eissn><abstract>Bulk chalcogenide glass materials of Se
80
Te
20-
x
In
x
(
x
= 0, 3, 6, 9 and 11) were prepared via the melting-quenching technique. Se
80
Te
20-
x
In
x
thin films were evaporated thermally on glass substrates. The results of this study revealed that In doping and annealing time resulted in significant tailoring of some physical properties of Se
80
Te
20-
x
In
x
thin films. The annealing process changes the amorphous nature of Se
80
Te
20-
x
In
x
thin films to a crystal one. As both In content and annealing time increase, crystallite size decreases and internal lattice strain increases for all samples except those with
x
= 11. Refractive indices for Se
80
Te
20-
x
In
x
thin films were fitted according to the main parameters of the single-oscillator model. It was also discovered that Se
80
Te
20-
x
In
x
thin films have a high absorption of high-energy photons. The increasing annealing time improves the refractive index. The bandgap got smaller when the annealing time was increased.</abstract><cop>Berlin/Heidelberg</cop><pub>Springer Berlin Heidelberg</pub><doi>10.1007/s00339-022-05736-1</doi><orcidid>https://orcid.org/0000-0002-1863-0276</orcidid></addata></record> |
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language | eng |
recordid | cdi_proquest_journals_2685063378 |
source | Springer Nature |
subjects | Annealing Applied physics Characterization and Evaluation of Materials Condensed Matter Physics Crystallites Energy gap Glass substrates Lattice strain Machines Manufacturing Materials science Nanotechnology Optical and Electronic Materials Optical properties Physical properties Physics Physics and Astronomy Processes Refractivity Surfaces and Interfaces Thin Films |
title | RETRACTED ARTICLE: Tailoring of optical properties of Se80Te20-xInx films by annealing process |
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