Cu-Ir thin film alloy as a potential substrate for the heteroepitaxial diamond growth

•Use of Ir(Cu) alloy allows to produce high quality heteroepitaxial diamond.•The magnetron-sputtered Cu form a solid solution with Ir at concentrations up to 27 at.%•The azimuthal disorientation of CVD-grown diamond crystallites on the Ir(Cu) surface is 0.8°. Due to a relatively low mismatch to the...

Full description

Saved in:
Bibliographic Details
Published in:Materials letters 2022-08, Vol.321, p.132441, Article 132441
Main Authors: Zenkin, S., Gaydaychuk, A., Mitulinsky, A., Linnik, S.
Format: Article
Language:English
Subjects:
Copper
CVD diamond
Diamond films
Diamond heteroepitaxy
Ir-Cu thin film
Iridium
Materials science
Solid solutions
Substrates
Thin films
Citations: Items that this one cites
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:•Use of Ir(Cu) alloy allows to produce high quality heteroepitaxial diamond.•The magnetron-sputtered Cu form a solid solution with Ir at concentrations up to 27 at.%•The azimuthal disorientation of CVD-grown diamond crystallites on the Ir(Cu) surface is 0.8°. Due to a relatively low mismatch to the diamond lattice, iridium allows to produce high-quality heteroepitaxial diamond films. However, extremely high price of iridium motivates to find a suitable replacement. In this article, we focus on the new homogeneous Ir(Cu) alloy sputtered on the SrTiO3 as a potential substrate material for the diamond heteroepitaxy. We show that in magnetron-sputtered thin films copper can form a solid solution with iridium at concentrations up to 27 at.% with the same FCC structure. Ir(Cu) alloy can reduce using of iridium with the same quality of heteroepitaxial diamond production.
ISSN:0167-577X
1873-4979
DOI:10.1016/j.matlet.2022.132441