Power Compression and Phase Analysis of GaN HEMT for Microwave Receiver Protection

• Published in: Electronics (Basel) 2022-07, Vol.11 (13), p.1958
• Main Authors: Song, Wenhan, Guo, Haowen, Gu, Yitian, Zhou, Junmin, Sui, Jin, Chen, Baile, Huang, Wei, Zou, Xinbo
• Format: Article
• Language: English
• Subjects: Diodes; Electric potential; Frequency variation; Gallium nitrides; High electron mobility transistors; Semiconductor devices; Transistors; Voltage
• ISSN: 2079-9292; 2079-9292
• DOI: 10.3390/electronics11131958

This paper reports a high-performance microwave receiver protector (RP) based on a single gallium nitride (GaN) high electron mobility transistor (HEMT) at an operation frequency of 30 to 3000 MHz. The HEMT-based RP exhibits multi features: high power compression, constant output power, tunable threshold power level, and insensitivity to frequency variation. With a low drain voltage (Vds) of 3 V, constant output power of 9.9 dBm was acquired for input power over its threshold power of 3.2 dBm. Power compression of 13.3 dB was achieved at the input power of Pin = 20 dBm. In addition, adjustable threshold power level Pth could be obtained by merely tuning drain voltage. Transducer gain measurement results were employed to explain the occurrence of output power saturation. Relatively higher Pth was linked to wider gate voltage swing which extended the linear region of the Pout-Pin characteristic. In addition, the GaN HEMT’s power compression capability shows great immunity to frequency variation, which is promising for protecting sensitive receiver components at both low and high frequencies. Finally, the phase shift of the GaN HEMT RP at high input power was measured and analyzed by the nonlinear behaviors of input capacitance Cgs.