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Terahertz acoustic phonon Cerenkov emission in bilayer graphene
We present a theoretical investigation on the generation of Cerenkov emission of terahertz acoustic phonons in bilayer graphene (BLG) in the presence of a driving dc electric field. We have numerically and analytically studied the Cerenkov phonon emission spectrum, P s p e c t r u m ( ω p , θ ), and...
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Published in: | Journal of applied physics 2022-07, Vol.132 (2) |
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container_title | Journal of applied physics |
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creator | Ansari, Meenhaz Nafees, Subhana Ashraf, S. S. Z. Ahmad, Absar |
description | We present a theoretical investigation on the generation of Cerenkov emission of terahertz acoustic phonons in bilayer graphene (BLG) in the presence of a driving dc electric field. We have numerically and analytically studied the Cerenkov phonon emission spectrum,
P
s
p
e
c
t
r
u
m
(
ω
p
,
θ
), and phonon intensity,
P
i
n
t
e
n
s
i
t
y
(
θ
), dependence on the phonon frequency
ω
p, drift velocity
v
d, electron temperature
T
e, concentration n, and phonon emission angle
θ in BLG with and without considering the chirality of the charge carriers. We find that the magnitude of
P
s
p
e
c
t
r
u
m
(
ω
p
,
θ
) increases at larger drift velocities and applied electric fields with the peak of the spectrum shifting toward the higher frequency side. The spectrum magnitude in BLG is found to be much enhanced as compared to conventional 2D semiconductors and transition metal dichalcogenides, which makes it viable for SASER and other practical device applications. The chiral nature of carriers strongly influences the
P
s
p
e
c
t
r
u
m
(
ω
p
,
θ
) behavior and sharpens the spectrum peak but with a decrease in the magnitude. The chirality favors the negative emission spectrum caused by the absorption of acoustic phonons.
P
s
p
e
c
t
r
u
m
(
ω
p
,
θ
) and
P
i
n
t
e
n
s
i
t
y
(
θ
) are found to be strongly dependent on temperature but independent of carrier concentration in the equipartition regime. The study is significant from the point of application of BLG as an acousto/optoelectronic device and high-frequency phonon spectrometers. |
doi_str_mv | 10.1063/5.0091369 |
format | article |
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P
s
p
e
c
t
r
u
m
(
ω
p
,
θ
), and phonon intensity,
P
i
n
t
e
n
s
i
t
y
(
θ
), dependence on the phonon frequency
ω
p, drift velocity
v
d, electron temperature
T
e, concentration n, and phonon emission angle
θ in BLG with and without considering the chirality of the charge carriers. We find that the magnitude of
P
s
p
e
c
t
r
u
m
(
ω
p
,
θ
) increases at larger drift velocities and applied electric fields with the peak of the spectrum shifting toward the higher frequency side. The spectrum magnitude in BLG is found to be much enhanced as compared to conventional 2D semiconductors and transition metal dichalcogenides, which makes it viable for SASER and other practical device applications. The chiral nature of carriers strongly influences the
P
s
p
e
c
t
r
u
m
(
ω
p
,
θ
) behavior and sharpens the spectrum peak but with a decrease in the magnitude. The chirality favors the negative emission spectrum caused by the absorption of acoustic phonons.
P
s
p
e
c
t
r
u
m
(
ω
p
,
θ
) and
P
i
n
t
e
n
s
i
t
y
(
θ
) are found to be strongly dependent on temperature but independent of carrier concentration in the equipartition regime. The study is significant from the point of application of BLG as an acousto/optoelectronic device and high-frequency phonon spectrometers.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/5.0091369</identifier><identifier>CODEN: JAPIAU</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Acoustic absorption ; Acoustic emission ; Acoustics ; Applied physics ; Bilayers ; Carrier density ; Chirality ; Current carriers ; Drift ; Electric fields ; Electron energy ; Emission analysis ; Graphene ; Optoelectronic devices ; Phonons ; Spectrometers ; Temperature dependence ; Terahertz frequencies ; Transition metal compounds</subject><ispartof>Journal of applied physics, 2022-07, Vol.132 (2)</ispartof><rights>Author(s)</rights><rights>2022 Author(s). Published under an exclusive license by AIP Publishing.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c327t-cc6e29072b0cc0addf48226beab4772fd2b63cadec32fa8085239f126553410c3</citedby><cites>FETCH-LOGICAL-c327t-cc6e29072b0cc0addf48226beab4772fd2b63cadec32fa8085239f126553410c3</cites><orcidid>0000-0001-5828-8658 ; 0000-0002-7912-3569 ; 0000-0002-6273-3563</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Ansari, Meenhaz</creatorcontrib><creatorcontrib>Nafees, Subhana</creatorcontrib><creatorcontrib>Ashraf, S. S. Z.</creatorcontrib><creatorcontrib>Ahmad, Absar</creatorcontrib><title>Terahertz acoustic phonon Cerenkov emission in bilayer graphene</title><title>Journal of applied physics</title><description>We present a theoretical investigation on the generation of Cerenkov emission of terahertz acoustic phonons in bilayer graphene (BLG) in the presence of a driving dc electric field. We have numerically and analytically studied the Cerenkov phonon emission spectrum,
P
s
p
e
c
t
r
u
m
(
ω
p
,
θ
), and phonon intensity,
P
i
n
t
e
n
s
i
t
y
(
θ
), dependence on the phonon frequency
ω
p, drift velocity
v
d, electron temperature
T
e, concentration n, and phonon emission angle
θ in BLG with and without considering the chirality of the charge carriers. We find that the magnitude of
P
s
p
e
c
t
r
u
m
(
ω
p
,
θ
) increases at larger drift velocities and applied electric fields with the peak of the spectrum shifting toward the higher frequency side. The spectrum magnitude in BLG is found to be much enhanced as compared to conventional 2D semiconductors and transition metal dichalcogenides, which makes it viable for SASER and other practical device applications. The chiral nature of carriers strongly influences the
P
s
p
e
c
t
r
u
m
(
ω
p
,
θ
) behavior and sharpens the spectrum peak but with a decrease in the magnitude. The chirality favors the negative emission spectrum caused by the absorption of acoustic phonons.
P
s
p
e
c
t
r
u
m
(
ω
p
,
θ
) and
P
i
n
t
e
n
s
i
t
y
(
θ
) are found to be strongly dependent on temperature but independent of carrier concentration in the equipartition regime. The study is significant from the point of application of BLG as an acousto/optoelectronic device and high-frequency phonon spectrometers.</description><subject>Acoustic absorption</subject><subject>Acoustic emission</subject><subject>Acoustics</subject><subject>Applied physics</subject><subject>Bilayers</subject><subject>Carrier density</subject><subject>Chirality</subject><subject>Current carriers</subject><subject>Drift</subject><subject>Electric fields</subject><subject>Electron energy</subject><subject>Emission analysis</subject><subject>Graphene</subject><subject>Optoelectronic devices</subject><subject>Phonons</subject><subject>Spectrometers</subject><subject>Temperature dependence</subject><subject>Terahertz frequencies</subject><subject>Transition metal compounds</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2022</creationdate><recordtype>article</recordtype><recordid>eNqd0E1LAzEQBuAgCtbqwX-w4Elh6yTZZJOTSKkfUPBSzyGbndit7WZNtoX6611pwbungeHhHeYl5JrChILk92ICoCmX-oSMKCidl0LAKRkBMJorXepzcpHSCoBSxfWIPCww2iXG_juzLmxT37isW4Y2tNkUI7afYZfhpkmpGTZNm1XN2u4xZh_Rdkts8ZKcebtOeHWcY_L-NFtMX_L52_Pr9HGeO87KPndOItNQsgqcA1vXvlCMyQptVZQl8zWrJHe2xoF7q0AJxrWnTArBCwqOj8nNIbeL4WuLqTersI3tcNIwqTQvtAQ6qNuDcjGkFNGbLjYbG_eGgvntxwhz7GewdwebXNPbfvjvf3gX4h80Xe35DwRJc3c</recordid><startdate>20220714</startdate><enddate>20220714</enddate><creator>Ansari, Meenhaz</creator><creator>Nafees, Subhana</creator><creator>Ashraf, S. S. Z.</creator><creator>Ahmad, Absar</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0001-5828-8658</orcidid><orcidid>https://orcid.org/0000-0002-7912-3569</orcidid><orcidid>https://orcid.org/0000-0002-6273-3563</orcidid></search><sort><creationdate>20220714</creationdate><title>Terahertz acoustic phonon Cerenkov emission in bilayer graphene</title><author>Ansari, Meenhaz ; Nafees, Subhana ; Ashraf, S. S. Z. ; Ahmad, Absar</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c327t-cc6e29072b0cc0addf48226beab4772fd2b63cadec32fa8085239f126553410c3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2022</creationdate><topic>Acoustic absorption</topic><topic>Acoustic emission</topic><topic>Acoustics</topic><topic>Applied physics</topic><topic>Bilayers</topic><topic>Carrier density</topic><topic>Chirality</topic><topic>Current carriers</topic><topic>Drift</topic><topic>Electric fields</topic><topic>Electron energy</topic><topic>Emission analysis</topic><topic>Graphene</topic><topic>Optoelectronic devices</topic><topic>Phonons</topic><topic>Spectrometers</topic><topic>Temperature dependence</topic><topic>Terahertz frequencies</topic><topic>Transition metal compounds</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ansari, Meenhaz</creatorcontrib><creatorcontrib>Nafees, Subhana</creatorcontrib><creatorcontrib>Ashraf, S. S. Z.</creatorcontrib><creatorcontrib>Ahmad, Absar</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Ansari, Meenhaz</au><au>Nafees, Subhana</au><au>Ashraf, S. S. Z.</au><au>Ahmad, Absar</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Terahertz acoustic phonon Cerenkov emission in bilayer graphene</atitle><jtitle>Journal of applied physics</jtitle><date>2022-07-14</date><risdate>2022</risdate><volume>132</volume><issue>2</issue><issn>0021-8979</issn><eissn>1089-7550</eissn><coden>JAPIAU</coden><abstract>We present a theoretical investigation on the generation of Cerenkov emission of terahertz acoustic phonons in bilayer graphene (BLG) in the presence of a driving dc electric field. We have numerically and analytically studied the Cerenkov phonon emission spectrum,
P
s
p
e
c
t
r
u
m
(
ω
p
,
θ
), and phonon intensity,
P
i
n
t
e
n
s
i
t
y
(
θ
), dependence on the phonon frequency
ω
p, drift velocity
v
d, electron temperature
T
e, concentration n, and phonon emission angle
θ in BLG with and without considering the chirality of the charge carriers. We find that the magnitude of
P
s
p
e
c
t
r
u
m
(
ω
p
,
θ
) increases at larger drift velocities and applied electric fields with the peak of the spectrum shifting toward the higher frequency side. The spectrum magnitude in BLG is found to be much enhanced as compared to conventional 2D semiconductors and transition metal dichalcogenides, which makes it viable for SASER and other practical device applications. The chiral nature of carriers strongly influences the
P
s
p
e
c
t
r
u
m
(
ω
p
,
θ
) behavior and sharpens the spectrum peak but with a decrease in the magnitude. The chirality favors the negative emission spectrum caused by the absorption of acoustic phonons.
P
s
p
e
c
t
r
u
m
(
ω
p
,
θ
) and
P
i
n
t
e
n
s
i
t
y
(
θ
) are found to be strongly dependent on temperature but independent of carrier concentration in the equipartition regime. The study is significant from the point of application of BLG as an acousto/optoelectronic device and high-frequency phonon spectrometers.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/5.0091369</doi><tpages>10</tpages><orcidid>https://orcid.org/0000-0001-5828-8658</orcidid><orcidid>https://orcid.org/0000-0002-7912-3569</orcidid><orcidid>https://orcid.org/0000-0002-6273-3563</orcidid></addata></record> |
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identifier | ISSN: 0021-8979 |
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language | eng |
recordid | cdi_proquest_journals_2689349601 |
source | American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list) |
subjects | Acoustic absorption Acoustic emission Acoustics Applied physics Bilayers Carrier density Chirality Current carriers Drift Electric fields Electron energy Emission analysis Graphene Optoelectronic devices Phonons Spectrometers Temperature dependence Terahertz frequencies Transition metal compounds |
title | Terahertz acoustic phonon Cerenkov emission in bilayer graphene |
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