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Terahertz acoustic phonon Cerenkov emission in bilayer graphene

We present a theoretical investigation on the generation of Cerenkov emission of terahertz acoustic phonons in bilayer graphene (BLG) in the presence of a driving dc electric field. We have numerically and analytically studied the Cerenkov phonon emission spectrum, P s p e c t r u m ( ω p , θ ), and...

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Published in:Journal of applied physics 2022-07, Vol.132 (2)
Main Authors: Ansari, Meenhaz, Nafees, Subhana, Ashraf, S. S. Z., Ahmad, Absar
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Language:English
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Ahmad, Absar
description We present a theoretical investigation on the generation of Cerenkov emission of terahertz acoustic phonons in bilayer graphene (BLG) in the presence of a driving dc electric field. We have numerically and analytically studied the Cerenkov phonon emission spectrum, P s p e c t r u m ( ω p , θ ), and phonon intensity, P i n t e n s i t y ( θ ), dependence on the phonon frequency ω p, drift velocity v d, electron temperature T e, concentration n, and phonon emission angle θ in BLG with and without considering the chirality of the charge carriers. We find that the magnitude of P s p e c t r u m ( ω p , θ ) increases at larger drift velocities and applied electric fields with the peak of the spectrum shifting toward the higher frequency side. The spectrum magnitude in BLG is found to be much enhanced as compared to conventional 2D semiconductors and transition metal dichalcogenides, which makes it viable for SASER and other practical device applications. The chiral nature of carriers strongly influences the P s p e c t r u m ( ω p , θ ) behavior and sharpens the spectrum peak but with a decrease in the magnitude. The chirality favors the negative emission spectrum caused by the absorption of acoustic phonons. P s p e c t r u m ( ω p , θ ) and P i n t e n s i t y ( θ ) are found to be strongly dependent on temperature but independent of carrier concentration in the equipartition regime. The study is significant from the point of application of BLG as an acousto/optoelectronic device and high-frequency phonon spectrometers.
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S. Z. ; Ahmad, Absar</creator><creatorcontrib>Ansari, Meenhaz ; Nafees, Subhana ; Ashraf, S. S. Z. ; Ahmad, Absar</creatorcontrib><description>We present a theoretical investigation on the generation of Cerenkov emission of terahertz acoustic phonons in bilayer graphene (BLG) in the presence of a driving dc electric field. We have numerically and analytically studied the Cerenkov phonon emission spectrum, P s p e c t r u m ( ω p , θ ), and phonon intensity, P i n t e n s i t y ( θ ), dependence on the phonon frequency ω p, drift velocity v d, electron temperature T e, concentration n, and phonon emission angle θ in BLG with and without considering the chirality of the charge carriers. We find that the magnitude of P s p e c t r u m ( ω p , θ ) increases at larger drift velocities and applied electric fields with the peak of the spectrum shifting toward the higher frequency side. The spectrum magnitude in BLG is found to be much enhanced as compared to conventional 2D semiconductors and transition metal dichalcogenides, which makes it viable for SASER and other practical device applications. The chiral nature of carriers strongly influences the P s p e c t r u m ( ω p , θ ) behavior and sharpens the spectrum peak but with a decrease in the magnitude. The chirality favors the negative emission spectrum caused by the absorption of acoustic phonons. P s p e c t r u m ( ω p , θ ) and P i n t e n s i t y ( θ ) are found to be strongly dependent on temperature but independent of carrier concentration in the equipartition regime. 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source American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list)
subjects Acoustic absorption
Acoustic emission
Acoustics
Applied physics
Bilayers
Carrier density
Chirality
Current carriers
Drift
Electric fields
Electron energy
Emission analysis
Graphene
Optoelectronic devices
Phonons
Spectrometers
Temperature dependence
Terahertz frequencies
Transition metal compounds
title Terahertz acoustic phonon Cerenkov emission in bilayer graphene
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