Ionization Radiation-Induced Base Current Decreasing and Narrowing Effects in Gated Bipolar Transistors

Ionizing radiation experiments on gated controlled lateral p-n-p (GLPNP) bipolar transistor show that the base current obtained by gate sweeping (GS) exhibits two "unusual" phenomena, including decreasing in amplitude and narrowing in peak profile after radiation. Both interface traps and...

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Bibliographic Details
Published in:IEEE transactions on nuclear science 2022-07, Vol.69 (7), p.1733-1746
Main Authors: Li, Lei, Chen, Xiao-Chi, Xiong, Cen, Zeng, Guang, Liu, Xu-Qiang, Yang, Gui Xia, Jian, Yuan, Li, Ze-Hong
Format: Article
Language:English
Subjects:
Bipolar transistors
Border trap
CAD
charge pumping
Computer aided design
Electron traps
Frequency dependence
gate sweeping (GS)
gated controlled bipolar transistor
Ionization
ionization damage
Ionizing radiation
Logic gates
Radiation effects
Recombination
Semiconductor devices
Silicon
Substrates
Switches
Traps
Voltage
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Summary:Ionizing radiation experiments on gated controlled lateral p-n-p (GLPNP) bipolar transistor show that the base current obtained by gate sweeping (GS) exhibits two "unusual" phenomena, including decreasing in amplitude and narrowing in peak profile after radiation. Both interface traps and border taps are called switching states due to their similar recombination effects on substrate carriers. The two traps can attribute to the base current. The separation of interface traps and border taps is achieved by a frequency-dependent charge pumping technique. Based on Technology Computer-Aided Design (TCAD) simulation in conjunction with device theory, this work suggests that the two "unusual" phenomena can be explained by the combined effects of border traps and interface traps.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2022.3177269